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MBR60100PT

Description
60 A, 100 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size337KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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MBR60100PT Overview

60 A, 100 V, SILICON, RECTIFIER DIODE

MBR60100PT Parametric

Parameter NameAttribute value
Parts packaging codeTO-3P
Manufacturer packaging codeTO-3P
MBR6030PT-MBR60100PT
Schottky Barrier Rectifiers
Features
High s urge capacity.
111
For us e in low voltage, high frequency inverters , free
wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
VOLTAGE RANGE: 30 -
100
V
CURRENT:
60
A
TO-3P(TO-247AD)
6.5± 0.3
15.8± 0.2
8.0± 0.2
4.9± 0.25
5.0± 0.15
2.0± 0.15
21± 0.5
φ3
.6± 0.15
Mechanical Data
Cas e:JEDEC TO-3P,m olded plas tic body
20.4± 0.4
PIN
1
2
3
2.4± 0.2
2.2± 0.15
3.0± 0.1
Term inals :Solderable per MIL-STD-750,
1 1
Method 2026
Polarity: As m arked
Pos ition: Any
Weight:
0.223 ounce, 6.3 grams
1.2± 0.15
0.6± 0.1
5.4± 0.15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
MBR MBR MBR
MBR MBR MBR MBR
UNITS
6030PT 6035PT 6040PT 6045PT 6050PT 6060PT 6080PT 60100PT
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m
rectified current @T
C
= 105°C
Peak forw ard surge current
8.3ms single half sine-wave
superimposed on rated load
V
RRM
V
RMS
V
DC
I
F(AV)
30
21
30
35
25
35
40
28
40
45
32
45
60
50
35
50
60
42
60
80
56
80
100
70
100
V
V
V
A
I
FSM
500
A
Maximum forward voltage
@ I
F
=30A,T
C
=25℃
V
F
0.62
20
0.75
0.85
V
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
R
R
θJC
mA
200
1.4
-
55
---- + 150
-
55
---- + 150
/W
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE:
1. Thermal resistance from junction to case.
T
J
T
STG
http://www.luguang.cn
mail:lge@luguang.cn

MBR60100PT Related Products

MBR60100PT MBR6030PT MBR6035PT MBR6040PT MBR6045PT MBR6050PT MBR6060PT MBR6080PT TO-247AD
Description 60 A, 100 V, SILICON, RECTIFIER DIODE 60 A, 30 V, SILICON, RECTIFIER DIODE 60 A, 35 V, SILICON, RECTIFIER DIODE 60 A, 40 V, SILICON, RECTIFIER DIODE 60 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD 40 A, 50 V, SILICON, RECTIFIER DIODE 60 A, 60 V, SILICON, RECTIFIER DIODE 60 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AD 60 A, 100 V, SILICON, RECTIFIER DIODE
Case Style - TO-3P - TO-3P TO-3P - TO-3P TO-3P -
IF(A) - 60 - 60 60 - 60 60 -
Maximum recurrent peak reverse voltage - 40 - 40 45 - 60 80 -
Maximum instantaneous forward voltage - 0.62 - 0.62 0.62 - 0.75 0.85 -
@IF(A) - 30 - 30 30 - 30 30 -
TJ(℃) - / - / / - / / -
class - Diodes - Diodes Diodes - Diodes Diodes -
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