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RGL34M

Description
0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA
CategoryDiscrete semiconductor    Fast recovery diode   
File Size177KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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RGL34M Overview

0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA

RGL34M Parametric

Parameter NameAttribute value
Case StyleDO-213AA
IVA(A)0.5
VRRM (V)1000
IFSM (A)10
VF (V)1.3
@IVA(A)0.5
Maximum reverse current5.0
TRR(nS)500
classDiodes
RGL34A-RGL34M
Surface Mount Rectifiers
VOLTAGE RANGE
: 50 --- 1000 V
CURRENT:
0.5
A
Features
Plastic package has underwriters laboratories
flammability classification 94V-0
Glass passivated chip junction
For surface mount applications
1.6± 0.1
DO - 213AA
SOLDERABLE ENDS
D2=D1
0
0.20
High temperature metallurgically bonded construction
Cavity-free glass passivated junction
High temperature soldering guaranteed:450
℃/5
seconds
at terminals.Complete device sub-mersible temperature
of 265℃ for 10 seconds in solder bath
D2
D1
0.5± 0.1
3.5± 0.2
0.5± 0.1
Mechanical Data
Case: JEDEC DO-213AA,molded plastic
Polarity: Color band denotes cathode
Weight: 0.0014 ounces, 0.036 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%.
RGL
34A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
T
T
=55℃
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage @0.5A
Maximum reverse current
@T
A
=25℃
RGL RGL RGL RGL RGL RGL
UNITS
34B 34D 34G 34J 34K 34M
100
70
100
200
140
200
400
280
400
0.5
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
j
R
θJA
T
j
T
STG
50
35
50
10
A
1.3
5.0
50
150
250
4.0
150
- 55 ---- +175
- 55 ---- +175
500
V
µA
ns
pF
℃/W
at rated DC blocking voltage @T
A
=125℃
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to ambient, 0.24×0.24"(6.0×6.0mm) copper pads to each terminal.
http://www.luguang.cn
mail:lge@luguang.cn

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RGL34M RGL34A RGL34B RGL34D RGL34G RGL34J RGL34K
Description 0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 50 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 200 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 800 V, SILICON, SIGNAL DIODE, DO-213AA
Case Style DO-213AA - DO-213AA DO-213AA DO-213AA DO-213AA DO-213AA
IVA(A) 0.5 - 0.5 0.5 0.5 0.5 0.5
VRRM (V) 1000 - 100 200 400 600 800
IFSM (A) 10 - 10 10 10 10 10
VF (V) 1.3 - 1.3 1.3 1.3 1.3 1.3
@IVA(A) 0.5 - 0.5 0.5 0.5 0.5 0.5
Maximum reverse current 5.0 - 5.0 5.0 5.0 5.0 5.0
TRR(nS) 500 - 150 150 150 250 500
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