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RS2J

Description
2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size218KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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RS2J Overview

2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA

RS2J Parametric

Parameter NameAttribute value
Parts packaging codeSMB
Manufacturer packaging codeSMB
RS2A - RS2M
2.0 AMPS. Surface Mount Fast Recovery Rectifiers
SMB/DO-214AA
Features
For surface mounted application
Glass passivated junction chip
Built-in strain relief, ideal for automated
placement
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Fast switching for high efficiency
High temperature soldering:
260
o
C / 10 seconds at terminals
Mechanical Data
Cases: Molded plastic
Terminals:
Pure tin plated, Lead free.
Polarity: Indicated by cathode band
Packing: 12mm t
ape
Weight: 0.093 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
See Fig. 1 @T
L
=100 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current
o
@ T
A
=25 C at Rated DC Blocking
o
Voltage @ T
A
=125 C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
R
θJL
T
J
RS
2A
50
35
50
RS
2B
100
70
100
RS
2D
200
140
200
RS
2G
400
280
400
2.0
50
1.3
5
200
RS
2J
600
420
600
RS
2K
800
560
800
RS
2M
1000
700
1000
Units
V
V
V
A
A
V
uA
uA
150
50
55
18
250
500
nS
pF
o
-55 to +150
Storage Temperature Range
T
STG
-55 to +150
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. Thermal Resistance from Junction to Ambient and Junction to Lead Mounted on P.C.B. with
0.4” x 0.4” ( 10mm x 10 mm ) Copper Pad Areas.
C
/W
o
C
o
C
http://www.luguang.cn
mail:lge@luguang.cn

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RS2J RS2A RS2B RS2D RS2G RS2K
Description 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 100 V, SILICON, RECTIFIER DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 400 V, SILICON, RECTIFIER DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE
Parts packaging code SMB SMB SMB SMB SMB SMB
Manufacturer packaging code SMB SMB SMB SMB SMB SMB

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