C
APACITOR
A
RRAYS
Capacitor arrays combine separate multi-layer ceramic
capacitors of the same value in a single passive
component. The primary advantages of this device are a
reduction in PCB space and placement time. The arrays
are offered in three standard dielectrics and feature barrier
terminations and tape & reel packaging.
F
EATURES
• Multiple Caps in One Chip
• Reduces Circuit Size
• Easier Handling
• Lower Placement Cost
• Increased Throughput
A
PPLICATIONS
• Cellular / Pagers
• Handheld Equipment
• PCMCIA Cards
• Camcorders
• PC’s & Peripherals
C
APACITANCE
/ V
OLTAGE
S
ELECTION
C
HIP
S
IZE
A11 / 0405
RATED
VOLTAGE
10 VDC
16 VDC
25 VDC
16 VDC
NPO DIELECTRIC
min.
MAX.
10 pF
10 pF
10 pF
680 pF
680 pF
680 pF
X7R DIELECTRIC
min.
MAX.
560 pF
560 pF
560 pF
.033 µF
.015 µF
330 pF
10 pF
470 pF
220 pF
6800 pF
220 pF
.047 µF
.033 µF
.022 µF
.047 µF
.022 µF
.010 µF
4700 pF
.150 µF
.068 µF
.010 µF
.220 µF
.100 µF
.047 µF
Y5V DIELECTRIC
min.
MAX.
A18 / 0612
25 VDC
50 VDC
100 VDC
Available capacitance values include the following significant R12 retma values and their multiples:
1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 ( 1.0 = 1.0, 10, 100, 1000, etc.)
Please contact the factory for size/voltage/value combinations not shown.
H
OW TO
O
RDER
- C
APACITOR
A
RRAYS
160
VOLTAGE
100 = 10 V
160 = 16 V
250 = 25 V
500 = 50 V
101 = 100 V
A11
CASE SIZE
A11 = 0405
A18 = 1206
N
DIELECTRIC
N = NPO
W = X7R
Z = Z5U
100
CAPACITANCE
1st two digits are
significant; third digit
denotes number of zeros
10 = 1.0 pF
101 = 100 pF
J
TOLERANCE
J = ± 5%
K = ± 10%
M = ± 20%
Z = + 80 - 20%
V
TERMINATION
V = Ni barrier w/
100% Sn Plating
MARKING
4 = Unmarked
4
E
TAPE MODIFIER
Reel
Code Type
E Embossed 7”
U Embossed 13”
Tape specifications
conform to EIA RS481
P/N written: 160A11N100JV4E
12
www.johanson dielectrics.com
C
APACITOR
A
RRAYS
Mechanical Dimensions: Size A11
In
L
W
T
Bw
Bl
P
C
.040 ± .005
.055 ± .005
.030 max.
.015 ± .004
.010 ± .004
.026 ± .005
.013 ± .004
(mm)
(1.02±.13)
(1.40±.13)
(0.76 max.)
(0.38±0.10)
(0.25±0.10)
(0.66±0.13)
(0.33±0.10)
Bl
C
C/L of Chip
W
P
L
T
Bw
Mechanical Dimensions: Size A18
In
L
W
T
B
Bo
Bs
Bc
.126±.008
.063±.008
.059 max.
.016±.004
.008 Typical
.030 Typical
.045±.004
(mm)
(3.20±.02)
(1.60±.02)
(1.50 max.)
(0.41±0.1)
(0.20 TYP)
(0.76 TYP)
(1.14±0.1)
B
Bo
Bc
Bs
Center of Chip
L
W
Bc
Bs
T
Solder Pad Dimensions: Size A11
a
Inches
(mm)
.020
(0.51)
b
.030
(0.76)
e
d
Solder Pad Dimensions: Size A18
d
.013
(0.33)
e
.026
(0.66)
Inches
(mm)
a
.035
(0.89)
b
.065
(1.65)
e
d
c
.060
(1.52)
c
.100
(2.54 )
d
.018
(0.46)
e
.030
(0.79)
c
a
b
a
b
c
Dielectric specifications are listed on page 20.
www.johanson dielectrics.com
13
E
LECTRICAL
C
HARACTERISTICS
PARAMETER
TEMPERATURE
COEFFICIENT:
0± 30 ppm/°C
20%
0%
NPO
-55 to +125°C
± 15%
20%
0%
X7R
-55 to +125°C
± 15%
20%
0%
X5R
-55 to +85°C
-20%
-20%
-20%
-40%
-40%
-40%
-60%
-60%
-60%
-80%
-55°C
-25°C
0°C
25°C
50°C
75°C
100°C
125°C
-80%
-55°C
-25°C
0°C
25°C
50°C
75°C
100°C
125°C
-80%
-55°C
-25°C
0°C
25°C
50°C
75°C
100°C
125°C
DISSIPATION FACTOR:
.001 (0.1%) max
For Vrated
≥
50 VDC, DF = 2.5% max
For Vrated = 125 VDC, DF = 3.0% max
For Vrated = 116 VDC, DF = 3.5% max
None
For Vrated = 25 VDC, DF = 3.0% max
For Vrated = 16 VDC: DF = 3.5% max
For Vrated = 10 VDC: DF = 5.0% max
IR @ 25°C, WVDC = 1000ΩF or
100GΩ whichever is less
2
DWV = 2.5 X WVDC,
25°C, 50mA max.
AGING:
INSULATION RESISTANCE:
DIELECTRIC STRENGTH:
2.5% / decade hour
IR @ 25°C, WVDC = 1000ΩF or 100GΩ whichever is less
1
IR @ 125°C, WVDC = 10% of 25°C rating
For Vrated = 6 - 200 VDC, DWV = 2.5 X WVDC, 25°C, 50mA max.
For Vrated = 201 - 499 VDC, DWV = 2.0 X WVDC, 25°C, 50mA max.
For Vrated = 500 - 999 VDC, DWV = 1.5 X WVDC, 25°C, 50mA max.
For Vrated = 1000+ VDC, DWV = 1.2 X WVDC, 25°C, 50mA max.
C > 100 pF; 1kHz ±50Hz;1.0±0.2 VRMS
C
≤
100 pF 1Mhz ±50kHz; 1.0±0.2 VRMS
1kHz ±50Hz;1.0±0.2 VRMS
1) Tanceram X7R IR = 500
ΩF
or 10 GΩ,
TEST PARAMETERS:
NOTES:
1kHz ±50Hz;1.0±0.2 VRMS
2) Tanceram X5R IR = 500
ΩF
or 10 GΩ
PARAMETER
TEMPERATURE COEFFICIENT:
+22% -56%
20%
0%
Z5U
+10 to +85°C
+22% -82%
20%
0%
X7R
-30 to +85°C
-20%
-20%
-40%
-40%
-60%
-60%
-80%
-55°C
-25°C
0°C
25°C
50°C
75°C
100°C
125°C
-80%
-55°C
-25°C
0°C
25°C
50°C
75°C
100°C
125°C
DISSIPATION FACTOR:
For Vrated
≥
25 VDC, DF = 4.0 % max
For Vrated = 16 VDC, DF = 5.0 % max
5.0 % / decade hour
For Vrated = 25 VDC, DF = 5.0% max
For Vrated = 16 VDC, DF = 7.0% max
For Vrated = 10 VDC, DF = 9.0% max
7.0% / decade hour
AGING:
INSULATION RESISTANCE:
DIELECTRIC STRENGTH:
TEST PARAMETERS:
NOTES:
IR @ 25°C, WVDC = 100ΩF or 10GΩ whichever is less
DWV = 2.5 X WVDC, 25°C, 50mA max.
1kHz ±50Hz; 0.5±0.2 VRMS
1kHz ±50Hz;1.0±0.2 VRMS
20
www.johanson dielectrics.com
Embedded System
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