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5STP08F6200

Description
Silicon Controlled Rectifier, 1310A I(T)RMS, 5300V V(DRM), 5300V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size517KB,6 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric Compare View All

5STP08F6200 Overview

Silicon Controlled Rectifier, 1310A I(T)RMS, 5300V V(DRM), 5300V V(RRM), 1 Element

5STP08F6200 Parametric

Parameter NameAttribute value
MakerABB
package instructionDISK BUTTON, O-CXDB-X4
Reach Compliance Codecompliant
ConfigurationSINGLE
Maximum DC gate trigger current400 mA
JESD-30 codeO-CXDB-X4
Number of components1
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current1310 A
Off-state repetitive peak voltage5300 V
Repeated peak reverse voltage5300 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR
V
DRM
V
DSM
I
T(AV)M
I
T(RMS)
I
TSM
V
(T0)
r
T
=
=
=
=
=
=
=
5600 V
6500 V
830 A
1310 A
11.8×10
3
A
1.24 V
1.015 mΩ
Phase Control Thyristor
5STP 08F6500
Doc. No. 5SYA1056-01 Apr. 03
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Blocking
Maximum rated values
1)
Symbol
V
DSM,
V
RSM
V
DRM,
V
RRM
V
RSM
dV/dt
crit
Parameter
Conditions
f = 5 Hz, t
p
= 10 ms
f = 50 Hz, t
p
= 10 ms
t
p
= 5 ms, single pulse
Exp. to 0.67 x V
DRM
, T
vj
= 125°C
5STP 08F6500
6500 V
5600 V
7000 V
5STP 08F6200
6200 V
5300 V
6700 V
2000 V/µs
min
typ
5STP 08F5800
5800 V
4900 V
6300 V
Characteristic values
Symbol Conditions
I
DSM
I
RSM
V
DSM
, T
vj
= 125°C
V
RSM
, T
vj
= 125°C
max
200
200
Unit
mA
mA
Forward leakage current
Reverse leakage current
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
vj
= 110°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
14
typ
22
max
24
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
2
2
Parameter
Weight
Surface creepage distance
Symbol Conditions
m
D
S
min
25
typ
max
0.55
Air strike distance
D
a
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

5STP08F6200 Related Products

5STP08F6200 5STP08F5800
Description Silicon Controlled Rectifier, 1310A I(T)RMS, 5300V V(DRM), 5300V V(RRM), 1 Element Silicon Controlled Rectifier, 1310A I(T)RMS, 4900V V(DRM), 4900V V(RRM), 1 Element
Maker ABB ABB
package instruction DISK BUTTON, O-CXDB-X4 DISK BUTTON, O-CXDB-X4
Reach Compliance Code compliant compliant
Configuration SINGLE SINGLE
Maximum DC gate trigger current 400 mA 400 mA
JESD-30 code O-CXDB-X4 O-CXDB-X4
Number of components 1 1
Number of terminals 4 4
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified
Maximum rms on-state current 1310 A 1310 A
Off-state repetitive peak voltage 5300 V 4900 V
Repeated peak reverse voltage 5300 V 4900 V
surface mount YES YES
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED
Trigger device type SCR SCR
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