MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
FY10AAJ-03A
OUTLINE DRAWING
Dimensions in mm
6.0
4.4
5.0
1.8 MAX.
0.4
1.27
SOURCE
GATE
DRAIN
q
4V DRIVE
q
V
DSS ..................................................................................
30V
q
r
DS (ON) (MAX) ..........................................................
13.5mΩ
q
I
D .........................................................................................
10A
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
30
±20
10
70
10
2.3
9.2
2.0
–55 ~ +150
–55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
L = 10µH
Typical value
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
Parameter
Drain-source breakdown voltage
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 10V
I
D
= 5A, V
GS
= 4V
I
D
= 10A, V
GS
= 10V
I
D
= 10A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
Limits
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
1.5
9.5
15
0.095
20
1800
650
280
25
45
125
90
0.75
—
45
Max.
—
±0.1
0.1
2.0
13.5
20.0
0.135
—
—
—
—
—
—
—
—
1.10
62.5
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 15V, I
D
= 5A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
I
S
= 2.3A, V
GS
= 0V
Channel to ambient
I
S
= 2.3A, dis/dt = –50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.5
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
2
10
2
2.0
7
5
3
2
7
5
3
2
7
5
3
2
tw = 100µs
1ms
10ms
100ms
10
1
1.5
1.0
10
0
0.5
10
–1
7
5
3
2
T
C
= 25°C
Single Pulse
DC
0
0
50
100
150
200
2 3 57
10
0
2 3 57
10
1
2 3 57
10
2
2 3 57
10
3
2
CASE TEMPERATURE T
C
(°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
4V
OUTPUT CHARACTERISTICS
(TYPICAL)
20
V
GS
= 10V
8V
6V
4V
3.5V
T
C
= 25°C
Pulse Test
DRAIN CURRENT I
D
(A)
40
30
V
GS
= 10V
8V
6V
T
C
= 25°C
Pulse Test
3.5V
DRAIN CURRENT I
D
(A)
16
12
3V
20
3V
8
10
P
D
= 2W
4
P
D
= 2W
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
T
C
= 25°C
Pulse Test
0.8
32
0.6
24
V
GS
= 4V
10V
0.4
I
D
= 20A
10A
16
0.2
5A
8
0
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
DRAIN CURRENT I
D
(A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
T
C
= 25°C
V
DS
= 10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10
2
V
DS
= 10V
7 Pulse Test
5
4
3
2
T
C
= 25°C
75°C
125°C
DRAIN CURRENT I
D
(A)
30
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
40
10
1
7
5
4
3
2
20
10
0
0
2
4
6
8
10
10
0 0
10
2
3 4 5 7
10
1
2
3 4 5 7
10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
4
7
5
3
2
SWITCHING CHARACTERISTICS
(TYPICAL)
10
4
7
5
4
3
2
t
d(off)
10
3
7
5
3
2
Coss
Crss
SWITCHING TIME (ns)
Ciss
CAPACITANCE
Ciss, Coss, Crss (pF)
10
3
t
f
7
5
4
3 t
r
2 t
d(on)
10
2
7
5
3 T
C
h = 25°C
2 f = 1MH
Z
V
GS
= 0V
10
1 –1
10
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
2 0
10
T
C
h = 25°C
V
DD
= 15V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
2
3 4 5 7
10
1
2
3 4 5 7
10
2
DRAIN CURRENT I
D
(A)
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY10AAJ-03A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
SOURCE CURRENT I
S
(A)
V
GS
= 0V
Pulse Test
10
T
C
h = 25°C
I
D
= 10A
V
DS
= 15V
20V
25V
8
40
6
30
T
C
= 125°C
75°C
25°C
4
20
2
10
0
0
10
20
30
40
50
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
V
GS
= 10V
7 I
D
= 10A
5 Pulse Test
3
2
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
V
DS
= 10V
I
D
= 1mA
3.2
2.4
10
0
7
5
3
2
1.6
0.8
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch – a)
(°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5 D = 1.0
3
2 0.5
5 0.1
3
2 0.05
7
5 0.01
3
2
7 Single Pulse
5
3
2
P
DM
tw
T
D
=
tw
T
1.2
10
1
0.2
7
1.0
10
0
0.02
0.8
0.6
10
–1
0.4
–50
0
50
100
150
10
–2 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
PULSE WIDTH t
w
(s)
Sep.1998
CHANNEL TEMPERATURE Tch (°C)
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