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FR1001G

Description
10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size227KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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FR1001G Overview

10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB

FR1001G-FR1007G
Isolated 10AMP. Glass Passivated Fast Recovery Rectifiers
TO-220AB
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: TO-220AB molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals:
Pure tin plated, Lead free.
Polarity: As marked
High temperature soldering guaranteed:
260
o
C/10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 5.0A
Maximum DC Reverse Current @ T
C
=25
o
C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Maximum Reverse Recovery Time ( Note 1)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance RθJC (Note 2)
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
FR
FR
FR
FR
FR
FR
FR
1001G 1002G 1003G 1004G 1005G 1006G 1007G
Units
V
V
V
A
A
V
uA
uA
nS
pF
o
C/W
o
C
50
35
50
100
70
100
200
140
200
400
280
400
10
125
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
Trr
Cj
R
θJC
150
250
40
3.0
-65 to +150
500
Operating and Storage Temperature Range
T
J
,T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink
Size 2” x 3” x 0.25” Al-Plate.
3. Measured at 1MHz and Applied Reverse Voltage of 4.0 Volts D.C.
http://www.luguang.cn
mail:lge@luguang.cn

FR1001G Related Products

FR1001G FR1002G FR1003G FR1004G FR1006G FR1007G
Description 10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB

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