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FRA801G

Description
8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size186KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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FRA801G Overview

8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC

FRA801G-FRA807G
8.0AMP. Glass Passivated Fast Recovery Rectifiers
TO-220AC
.185(4.70)
.175(4.44)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.055(1.40)
.045(1.14)
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
.113(2.87)
.103(2.62)
PIN1
.16(4.06)
.14(3.56)
2
.11(2.79)
.10(2.54)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
Mechanical Data
Cases: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free.
Polarity: As marked
High temperature soldering guaranteed:
o
260 C /10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
= 55
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Maximum Instantaneous Forward Voltage @ 8.0A
Maximum DC Reverse Current @ T
C
=25 C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Maximum Reverse Recovery Time ( Note 2 )
Typical Junction Capacitance ( Note 1 ) T
J=
25℃
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
o
Symbol
FRA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
,T
STG
801G
FRA
802G
FRA
803G
FRA
804G
FRA
805G
FRA
806G
FRA
807G
Units
V
V
V
A
A
V
uA
uA
nS
pF
o
C/W
o
C
50
35
50
100
70
100
200
140
200
400
280
400
8.0
150
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
150
250
50
3.0
-65 to +150
500
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
http://www.luguang.cn
mail:lge@luguang.cn

FRA801G Related Products

FRA801G FRA802G FRA803G FRA804G FRA805G FRA806G FRA807G
Description 8 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC

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