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FRAF1606G

Description
16 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size193KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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FRAF1606G Overview

16 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC

FRAF1601G-FRAF1607G
Isolated 16.0AMP. Glass Passivated Fast Recovery Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
.124(3.16)
.118(3.00)
.112(2.85)
.100(2.55)
.606(15.5)
.583(14.8)
.063(1.6)
MAX
.161(4.1)
.146(3.7)
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: As marked
High temperature soldering guaranteed:
260
o
C /10 seconds 0.25”,(6.35mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
.110(2.8)
.098(2.5)
.030(0.76)
.020(0.50)
.055(1.4)
.043(1.1)
.035(0.9)
.020(0.5)
.071(1.8)
MAX
.543(13.8)
.512(13.2)
2
.100(2.55)
.100(2.55)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 16.0A
Maximum DC Reverse Current @ T
C
=25
o
C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Maximum Reverse Recovery Time ( Note 1)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance RθJC (Note 2)
Symbol
FRAF FRAF FRAF FRAF FRAF FRAF FRAF
Units
1601G 1602G 1603G 1604G 1605G 1606G 1607G
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
50
35
50
100
70
100
200
140
200
400
280
400
16.0
250
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
uA
uA
nS
pF
o
C/W
o
C
150
250
70
4.5
-65 to +150
500
Cj
R
θJC
Operating and Storage Temperature Range
T
J,
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Notes:
2. Thermal Resistance from Junction to Case Per Leg Mounted on Heatsink Size
2” x 3” x 0.25” Al-Plate.
3. Measured at 1MHz and Applied Reverse Voltage of 4.0 Volts D.C.
http://www.luguang.cn
mail:lge@luguang.cn

FRAF1606G Related Products

FRAF1606G FRAF1601G FRAF1602G FRAF1603G FRAF1604G FRAF1605G FRAF1607G
Description 16 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 16 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC

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