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5082-2302

Description
Mixer Diode, Silicon
CategoryDiscrete semiconductor    diode   
File Size4MB,5 Pages
ManufacturerHewlett Packard Co.
Download Datasheet Parametric View All

5082-2302 Overview

Mixer Diode, Silicon

5082-2302 Parametric

Parameter NameAttribute value
MakerHewlett Packard Co.
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Maximum diode capacitance1 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature100 °C
Minimum operating temperature-60 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.1 W
Certification statusNot Qualified
Maximum reverse current0.3 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
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