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BLF8G09LS-270W_15

Description
Power LDMOS transistor
File Size237KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BLF8G09LS-270W_15 Overview

Power LDMOS transistor

BLF8G09LS-270W;
BLF8G09LS-270GW
Power LDMOS transistor
Rev. 2 — 17 January 2014
Product data sheet
1. Product profile
1.1 General description
270 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 716 MHz to 960 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit, tested
on straight lead device.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
716 to 728
V
DS
(V)
28
P
L(AV)
(W)
67
G
p
(dB)
20
D
(%)
33
ACPR
5M
(dBc)
35
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
Device can operate with the supply current delivered through the video leads
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (716 MHz to 960 MHz)
Lower output capacitance for improved performance in Doherty applications
Decoupling leads to enable improved video bandwidth (55 MHz typical)
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Design optimized for gull-wing and straight lead versions
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
716 MHz to 960 MHz frequency range
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