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BLF8G19LS-170BV_15

Description
Power LDMOS transistor
File Size238KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BLF8G19LS-170BV_15 Overview

Power LDMOS transistor

BLF8G19LS-170BV
Power LDMOS transistor
Rev. 3 — 1 May 2015
Product data sheet
1. Product profile
1.1 General description
170 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1800 MHz to 1990 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
1-carrier W-CDMA
[2]
[1]
[2]
f
(MHz)
1930 to 1990
1805 to 1880
I
Dq
(mA)
1300
1300
V
DS
(V)
32
28
P
L(AV)
(W)
60
33
G
p
(dB)
18.0
19.8
D
(%)
32
29
ACPR
(dBc)
31
40
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (100 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
1800 MHz to 1990 MHz frequency range
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