BLF8G20LS-140V;
BLF8G20LS-140GV
Power LDMOS transistor
Rev. 2 — 7 October 2014
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
1805 MHz to 1990 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
I
Dq
(mA)
900
V
DS
(V)
28
P
L(AV)
(W)
35
G
p
(dB)
18.5
D
(%)
32
ACPR
5M
(dBc)
30
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (150 MHz typical)
Designed for broadband operation (1805 MHz to 1990 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1805 MHz
to 1990 MHz frequency range
NXP Semiconductors
BLF8G20LS-140(G)V
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
Pinning
Description
drain
gate
source
decoupling lead
decoupling lead
n.c.
n.c.
[1]
Simplified outline
Graphic symbol
BLF8G20LS-140V (SOT1244B)
BLF8G20LS-140GV (SOT1244C)
1
2
3
4
5
6
7
[1]
drain
gate
source
decoupling lead
decoupling lead
n.c.
n.c.
Connected to flange.
[1]
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF8G20LS-140V
BLF8G20LS-140GV
-
-
Description
earless flanged ceramic package; 6 leads
earless flanged ceramic package; 6 leads
Version
SOT1244B
SOT1244C
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLF8G20LS-140V_20LS-140GV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 7 October 2014
2 of 17
NXP Semiconductors
BLF8G20LS-140(G)V
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 35 W
Typ
0.4
Unit
K/W
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 1.8 mA
V
DS
= 10 V; I
D
= 180 mA
V
DS
= 28 V; I
D
= 900 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
Min
65
1.5
1.6
-
-
-
-
-
Typ
-
1.8
2
-
33
-
0.08
Max Unit
-
2.3
2.4
2.8
-
280
-
V
V
V
A
A
nA
S
13.35 -
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 %
probability on the CCDF; f
1
= 1807.5 MHz; f
2
= 1812.5 MHz; f
3
= 1872.5 MHz; f
4
= 1877.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 900 mA; T
case
= 25
C; unless otherwise specified; in a water
cooled AB test circuit.
Symbol
G
p
D
RL
in
ACPR
5M
Parameter
power gain
drain efficiency
input return loss
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 35 W
P
L(AV)
= 35 W
P
L(AV)
= 35 W
P
L(AV)
= 35 W
Min
17.3
28
-
-
Typ
32
17
30
Max
-
10
25
Unit
dB
%
dB
dBc
18.5 -
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G20LS-140V and BLF8G20LS-140GV are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 900 mA; P
L
= 140 W (CW); f = 1800 MHz.
BLF8G20LS-140V_20LS-140GV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 7 October 2014
3 of 17
NXP Semiconductors
BLF8G20LS-140(G)V
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data; I
Dq
= 900 mA; V
DS
= 28 V.
f
(MHz)
BLF8G20LS-140V
1805
1840
1880
1930
1960
1990
BLF8G20LS-140GV
1805
1840
1880
1930
1960
1990
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
1.71
3.75j
2.01
4.01j
2.35
4.08j
2.62
4.45j
3.13
4.87j
3.93
4.54j
1.71
5.75j
2.01
6.01j
2.35
6.08j
1.62
6.45j
3.13
6.87j
3.93
6.54j
Z
L[1]
()
1.5
3.7j
1.4
3.8j
1.5
3.8j
1.6
3.9j
1.4
3.8j
1.3
3.9j
1.5
5.7j
1.4
5.8j
1.5
5.8j
1.6
5.9j
1.4
5.8j
1.3
5.9j
Fig 1.
Definition of transistor impedance
BLF8G20LS-140V_20LS-140GV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 7 October 2014
4 of 17
NXP Semiconductors
BLF8G20LS-140(G)V
Power LDMOS transistor
7.3 VBW in a class-AB operation
The BLF8G20LS-140V and BLF8G20LS-140GV show 150 MHz (typical) video bandwidth
(IMD third-order intermodulation inflection point) in a class-AB test circuit in the 1805 MHz
to 1880 MHz band at V
DS
= 28 V and I
Dq
= 900 mA.
V
DS
= 28 V; I
Dq
= 900 mA; R
1
= 10
.
(1) low
(2) high
Fig 2.
VBW capacity in class-AB test circuit
BLF8G20LS-140V_20LS-140GV
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 7 October 2014
5 of 17
京公网安备 11010802033920号
EEWORLD
