BLF8G22LS-140
Power LDMOS transistor
Rev. 2 — 10 April 2013
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
I
Dq
(mA)
900
V
DS
(V)
28
P
L(AV)
(W)
33
G
p
(dB)
18.5
D
(%)
32.5
ACPR
(dBc)
31
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
NXP Semiconductors
BLF8G22LS-140
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G22LS-140
-
earless flanged ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability.
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 33 W
Typ
Unit
0.265 K/W
BLF8G22LS-140
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 10 April 2013
2 of 12
NXP Semiconductors
BLF8G22LS-140
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
Parameter
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 153 mA
V
DS
= 28 V; I
D
= 900 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 153 mA
Min Typ
65
1.5
1.7
-
-
-
-
-
-
1.9
2.0
-
Max
-
2.3
2.5
4.2
Unit
V
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 1.53 mA
29.1 -
-
1.3
0.1
420
-
-
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.355 A
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; carrier spacing
5 MHz; 3GPP test model 1; 1 - 64 DPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; RF performance at
V
DS
= 28 V; I
Dq
= 900 mA; T
case
= 25
C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
G
p
D
RL
in
ACPR
Parameter
power gain
drain efficiency
input return loss
adjacent channel power ratio
Conditions
P
L(AV)
= 33 W
P
L(AV)
= 33 W
P
L(AV)
= 33 W
P
L(AV)
= 33 W
Min
17.3
29
-
-
Typ
18.5
32.5
10
31
Max
-
-
6
27
Unit
dB
%
dB
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G22LS-140 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 900 mA; P
L
= 140 W (CW); f = 2110 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data; I
Dq
= 900 mA; V
DS
= 28 V.
f
(MHz)
2210
2140
2170
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
1.66
j4.54
1.87
j4.70
2.61
j5.48
Z
L[1]
()
1.50
j3.12
1.50
j3.12
1.50
j3.12
BLF8G22LS-140
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 10 April 2013
3 of 12
NXP Semiconductors
BLF8G22LS-140
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test circuit
PP
PP
&
&
5
&
&
&
&
PP
&
&
%/)*B,1387
5
&
&
&
%/)*B287387
&
&
DDD
Printed-Circuit Board (PCB): Rogers 4350B;
r
= 3.66; thickness = 0.765 mm;
thickness copper plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see
Figure 2.
Component
C1, C2, C3, C4, C5, C6
C7, C8, C9, C10
C11, C12
C13
R1, R2
[1]
[2]
BLF8G22LS-140
Description
Value
[1]
[2]
[2]
Remarks
ATC800B
Murata
Murata
Vishay Dale
SMD 0805
multilayer ceramic chip capacitor 9.7 pF
multilayer ceramic chip capacitor 1
F
multilayer ceramic chip capacitor 10
F
electrolytic capacitor
chip resistor
470
F,
63 V
6.2
American Technical Ceramics type 800B or capacitor of same quality.
Murata or capacitor of same quality.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 10 April 2013
4 of 12
NXP Semiconductors
BLF8G22LS-140
Power LDMOS transistor
7.4 Graphical data
7.4.1 1-Tone CW
DDD
*
S
'
*
S
'
3
/
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 3.
Power gain and drain efficiency as function of output power; typical values
7.4.2 CW pulsed
DDD
*
S
'
*
S
'
3
/
V
DS
= 28 V; I
Dq
= 900 mA; t
p
= 100
s;
= 10 %.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 4.
BLF8G22LS-140
Power gain and drain efficiency as function of output power; typical values
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 10 April 2013
5 of 12
京公网安备 11010802033920号
EEWORLD
