BLF8G22LS-220
Power LDMOS transistor
Rev. 3 — 30 May 2013
Product data sheet
1. Product profile
1.1 General description
220 W LDMOS power transistor for base station applications at frequencies from
2110 MHz to 2170 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
I
Dq
(mA)
1620
V
DS
(V)
28
P
L(AV)
(W)
55
G
p
(dB)
17
D
(%)
33
ACPR
(dBc)
30
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2110 MHz to 2170 MHz frequency range
NXP Semiconductors
BLF8G22LS-220
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G22LS-220
-
earless flanged ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability.
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
Typ
0.26
Unit
K/W
thermal resistance from junction to case T
case
= 80
C;
P
L
= 55 W (CW);
V
DS
= 28 V; I
Dq
= 1620 mA
Symbol Parameter
BLF8G22LS-220
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 30 May 2013
2 of 12
NXP Semiconductors
BLF8G22LS-220
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
DS
= 28 V; I
D
= 1620 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 0.27 A
Min
65
1.5
1.7
-
-
-
-
-
Typ
-
1.7
2.1
-
51
-
2.41
56.8
Max Unit
-
2.3
2.5
4.2
-
420
-
-
V
V
V
A
A
nA
S
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.7 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.25 A
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 DPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; f
3
= 2162.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1620 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
G
p
RL
in
D
ACPR
5M
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 55 W
P
L(AV)
= 55 W
P
L(AV)
= 55 W
P
L(AV)
= 55 W
Min
15.8
-
28
-
Typ Max
17
33
-
-
12 6
30 24
Unit
dB
dB
%
dBc
7. Test information
7.1 Ruggedness in class-AB operation
The BLF8G22LS-220 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1620 mA; P
L
= 200 W (CW); f = 2110 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull condition data; I
Dq
= 1620 mA; V
DS
= 28 V.
f
(MHz)
2110
2140
2170
[1]
Z
S
and Z
L
defined in
Figure 1.
Z
S[1]
()
1.59
j4.09
2.16
j4.45
2.46
j3.95
Z
L[1]
()
1.30
j2.20
1.20
j2.10
1.20
j2.30
BLF8G22LS-220
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 30 May 2013
3 of 12
NXP Semiconductors
BLF8G22LS-220
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Test circuit
Printed-Circuit Board (PCB): Rogers 4350B;
r
= 3.66; thickness = 0.765 mm;
thickness copper plating = 35
m.
See
Table 9
for a list of components.
Fig 2.
Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see
Figure 2.
Component
C1,C2, C3, C4, C5, C6
C7, C8, C9, C10
C11, C12
C13
R1, R2
[1]
[2]
BLF8G22LS-220
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
resistor
Value
9.7 pF
10
F
1
F
470
F,
63 V
9.1
[1]
[2]
[2]
Remarks
ATC 800B
Murata
Murata
Vishay Dale
SMD 0805
American Technical Ceramics type 800B or capacitor of same quality.
Murata or capacitor of same quality.
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 30 May 2013
4 of 12
NXP Semiconductors
BLF8G22LS-220
Power LDMOS transistor
7.4 Graphical data
7.4.1 One-tone CW
V
DS
= 28 V; I
Dq
= 1620 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 3.
Power gain and drain efficiency as function of output power; typical values
7.4.2 CW pulsed
V
DS
= 28 V; I
Dq
= 1620 mA; t
p
= 100
s;
= 10 %.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 4.
BLF8G22LS-220
Power gain and drain efficiency as function of output power; typical values
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 30 May 2013
5 of 12
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