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B120

Description
1 A, 20 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size169KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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B120 Overview

1 A, 20 V, SILICON, SIGNAL DIODE

B120-B160
Schottky Barrier Rectifiers
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 1.0 A
Features
Plastic package has Underwriters Laboratory
11 1
Flammability Classification 94V-0
For surface mounted applications
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
1.5± 0.1
DO - 214AC(SMA)
4.5± 0.1
Low power loss,high effciency
For use in low voltage high frequency inverters,free
11 1
wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250
o
C/10
11 1
seconds at terminals
5.1± 0.2
2.1± 0.2
Mechanical Data
Case:JEDEC DO-214AC,molded plastic over
11 11passivated
chip
Polarity: Color band denotes cathode end
Weight: 0.002 ounces, 0.064 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
Dev ice marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current at
x
T
L
(SEE FIG.1)
Peak forw ard surge current 8.3ms single half-
x
sine-w ave superimposed on rated load(JEDEC
x
Method)
Maximum instantaneous forw ard voltage at
x
1.0A(NOTE.1)
Maximum DC reverse current (NOTE.1)
x
@T
A
=25
o
C
at rated DC blockjing voltage
@T
A
=100 C
o
0.203MAX
1.3± 0.2
2.6± 0.15
0.2± 0.05
Low profile package
B120
V
RRM
V
RWS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θ
JA
R
θ
JL
20
14
20
B130
30
21
30
B140
40
28
40
1.0
30.0
B150
50
35
50
B160
60
42
60
UNITS
V
V
V
A
A
0.5
0.5
10.0
88.0
20.0
-
55
---
+125
-
55
--- +150
0.7
V
mA
Typical thermal resitance (NOTE. 2)
Storage temperature range Operating junction
x
and storage temperature range
Storage temperature range
o
C/W
o
T
j
T
STG
C
C
o
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm
2
)copper pad areas
http://www.luguang.cn
mail:lge@luguang.cn

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B120 B130 B140 B150 B160
Description 1 A, 20 V, SILICON, SIGNAL DIODE 1 A, 30 V, SILICON, SIGNAL DIODE 1 A, 40 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 60 V, SILICON, SIGNAL DIODE
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