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FML-G12S

Description
5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size203KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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FML-G12S Overview

5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC

FML-G12S
Super Fast Rectifiers
VOLTAGE RANGE:
200 V
CURRENT:
5.0
A
Features
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications
The plastic m aterial carries U/L recognition 94V-0
ITO-220AC
4.5± 0.2
10.2± 0.2
3.1
+0.2
-0.1
φ
3.3± 0.1
15.2± 0.5
16.5± 0.3
PIN
1
13.5± 0.5
2
xxxx
4.0± 0.3
1.4± 0.1
0.6± 0.1
8.2± 0.2
Mechanical Data
Case:JEDEC ITO-220AC
Polarity: As marked
Weight:0.056 ounces,1.587 gram
Mounting position: Any
5.0± 0.1
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
FML- G12S
Maximum recurrent peak reverse voltage
? 3.2± 0.2
2.6± 0.2
UNITS
V
V
V
V
RRM
V
RMS
V
DC
200
140
200
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@T
C
=100
Peak forw ard surge current
10ms
single half-sine-wave
superimposed on rated load
Maximum instantaneous
forward voltage
Maximum reverse current
at rated DC blocking voltage
(I
F
=5.0A)
@T
J
=25
@T
J
=100
I
F(AV)
5.0
A
I
FSM
65
A
V
F
I
R
t
rr
0.98
0.25
1.0
30
4.0
-
55
---- + 150
-
55
---- + 150
V
mA
ns
/W
Maximum reverse recovery time
Typical thermal resistance
(Note1)
(Note2)
R
θJC
T
J
T
STG
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Thermal resistance junction to case.
http://www.luguang.cn
mail:lge@luguang.cn

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