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5SDD06D5800

Description
Rectifier Diode, 1 Phase, 1 Element, 662A, 5800V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size80KB,5 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SDD06D5800 Overview

Rectifier Diode, 1 Phase, 1 Element, 662A, 5800V V(RRM), Silicon,

5SDD06D5800 Parametric

Parameter NameAttribute value
MakerABB
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
applicationHIGH VOLTAGE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current12500 A
Number of components1
Phase1
Number of terminals2
Maximum output current662 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5800 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
5SDD 06D6000
5SDD 06D6000
Old part no. DV 817-630-60
High Voltage Diode
Properties
§
§
§
§
Low forward voltage drop
Low recovery charge
High operating temperature
Low leakage current
Applications
§
Rectifier bridges
Key Parameters
= 6 000
V
RRM
= 662
I
FAVm
= 10 500
I
FSM
= 1.066
V
TO
= 0.778
r
T
V
A
A
V
mΩ
Types
V
RRM
5SDD 06D6000
5SDD 06D5800
Conditions:
6 000 V
5 800 V
T
j
= -40 ÷ 150 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
F
m
m
D
S
D
a
Mounting force
Weight
Surface creepage
distance
Air strike distance
11 ± 1
0.25
30
18.5
kN
kg
mm
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - D/009/98a Jul-10
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