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5KP33-5RE3

Description
Trans Voltage Suppressor Diode, 5000W, 33V V(RWM), Unidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size110KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

5KP33-5RE3 Overview

Trans Voltage Suppressor Diode, 5000W, 33V V(RWM), Unidirectional, 1 Element, Silicon

5KP33-5RE3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionO-PBCY-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakdown voltage44.9 V
Minimum breakdown voltage36.7 V
Maximum clamping voltage59 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PBCY-W2
JESD-609 codee4
Maximum non-repetitive peak reverse power dissipation5000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage33 V
Maximum reverse current10 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceSILVER
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
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