V
RRM
=
I
F
=
2500 V
2000 A
ABB StakPak H Series
Press-pack Diode
5SKF 20H2500
Doc. No. 5SYB 0117-02 May. 04
•
High SOA
•
High tolerance to uneven
mounting pressure
•
Suitable for series connection
•
Explosion resistant package
•
Modular design concept,
available for a wide range of
current ratings
Maximum Rated Values
1)
Parameter
2)
Collector-emitter voltage
DC forward current
Repetitive peak forward
current
Surge current
Junction temperature
Storage temperature
Mounting force
2)
1)
2)
Symbol
V
RRM
I
F
I
FM
I
FSM
T
vj
T
stg
F
M
T
c
= 75 °C
Conditions
min
max
2500
2000
4000
Unit
V
A
A
kA
°C
°C
kN
V
R
= 0 V, t
p
= 10 ms, T
vj
= 125 °C,
half-sinewave
5
-40
30
23
125
70
70
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9
For detailed mounting instructions refer to ABB document no. 5SYA 2037-02
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SKF 20H2500
Diode Characteristic Values
3)
Parameter
Repetitive peak reverse
current
Forward voltage
Peak forward recovery
voltage
Reverse recovery current
Reverse recovery charge
Reverse recovery time
Reverse recovery energy
3)
Symbol
I
RRM
V
F
V
FR
I
rr
Q
rr
t
rr
E
rec
V
R
= V
RRM
I
F
= 2000 A
Conditions
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 125°C
T
vj
= 25°C
V
CC
= 1250 V,
I
F
= 2000 A,
dI/dt = 3000 A/µs,
L
σ
= 200 nH
inductive load
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
T
vj
= 25°C
T
vj
= 125°C
min
typ
max
54
Unit
mA
V
V
V
A
A
µC
µC
µs
µs
J
J
1.95
1.90
60
1100
1600
1000
1900
1.7
1.8
0.9
1.7
2.20
2.20
dI/dt = 3000 A/µs
Characteristic values according to IEC 60747-2
Thermal Properties
Parameter
Thermal resistance junction
to case
Thermal resistance case to
heatsink
Operating junction
temperature
Symbol
R
th(j-c)
R
th(c-h)
T
vjop
Heatsink flatness :
Complete module area < 100
µm
Each submodule area < 50
µm
Roughness : < 6.3
µm
5
Conditions
min
typ
max
11
2
125
Unit
K/kW
K/kW
°C
Mechanical Properties
Parameter
Dimensions
Symbol
L* W* H
Conditions
Typical , see outline drawing
min
typ
max
Unit
mm
236*150*26
Clearance distance
Surface creepage distance
Weight
D
C
D
SC
acc. IEC 60664-1 and EN50124-1
acc. IEC 60664-1 and EN50124-1
10
23
1.7
mm
mm
kg
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0117-02 May. 04
page 2 of 5
5SKF 20H2500
Electrical configuration
Cathode
Anode
Aux. Anode
Outline drawing
StakPak H2
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0117-02 May. 04
page 3 of 5
5SKF 20H2500
I
F
[A]
4000
25 °C
125 °C
V
FR
[V]
3000
2000
1000
0
1.0
1.5
2.0
2.5
V
F
[V]
Fig. 1
Typical diode on-state characteristics
Fig. 2
Typical forward recovery voltage
versus di/dt
I
rr
, Q
rr
[A, µC]
3000
E
rec
[J]
3.0
I
rr
, Q
rr
[A, µC]
2500
E
rec
E
rec
[J]
2.0
2500
Q
rr
2000
I
rr
1500
E
rec
2.5
2000
1.6
2.0
1500
1.5
1000
Q
rr
1.2
I
rr
0.8
1000
V
CC
= 1250 V
500
di
F
/dt = 3000 A/µs
T
vj
= 125°C
0
0
800
1600
2400
3200
1.0
V
CC
= 1250 V
I
F
= 2000 A
T
vj
= 125°C
0.0
4000
0
1000
0.0
3500
0.5
500
0.4
1500
2000
2500
3000
I
F
[A]
di
F
/dt [A/µs]
Fig. 3
Typical diode reverse recovery
characteristics versus forward current
Fig. 4
Typical diode reverse recovery
characteristics versus dI/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0117-02 May. 04
page 4 of 5
ABB Semiconductors AG
5SKF 20H2500
Z
thIC
[K/kW]
2
Analytical function for transient thermal
impedance:
10
1
9
8
7
6
5
4
3
Z
th (j - c)
(t) =
∑
R
i
(1 - e
- t/
τ
i
)
i
=
1
i
Ri(K/kW)
τ
i
(ms)
F
m
= 30...70 kN
Double Side Cooling
n
2
1
4.568
580.8
2
4.615
53.11
3
0.944
3.286
4
0.803
0.609
10
9
8
7
6
5
4
3
0
2
10
-3
2
3 4 5 6 7 89
10
-2
2
3 4 5 6 7 89
10
-1
2
3 4 5 6 7 89
10
0
2
3 4 5 6 7 89
10
1
t [s]
Fig.4
Maximum thermal impedance of the
diode versus time
Environmental class according to IEC 60721
Mode
Storage
Transportation
Operation
Class
IE 11
IE 23
IE 33
Document - no.
5 SZK 9101-01
5 SZK 9102-01
5 SZK 9103-01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Doc. No. 5SYB 0117-02 May. 04
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
abbsem@ch.abb.com
Internet
www.abb.com/semiconductors
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