5SDA27Z1350 datasheet, PDF - EEWORLD Datasheet

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5SDA27Z1350: DescriptionRectifier Diode, 1 Phase, 6 Element, 13500V V(RRM), Silicon, CERAMIC, PRESSPACK-2; CategoryDiscrete semiconductor diode; File Size153KB，2 Pages; ManufacturerABB; Websitehttp://www.abb.com/

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5SDA27Z1350 Overview

Rectifier Diode, 1 Phase, 6 Element, 13500V V(RRM), Silicon, CERAMIC, PRESSPACK-2

5SDA27Z1350 Parametric

Parameter Name	Attribute value
Maker	ABB
package instruction	CERAMIC, PRESSPACK-2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
application	HIGH VOLTAGE
Configuration	SERIES CONNECTED, 6 ELEMENTS WITH BUILT-IN RESISTOR
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-CXSS-N2
Maximum non-repetitive peak forward current	60000 A
Number of components	6
Phase	1
Number of terminals	2
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	SPECIAL SHAPE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	13500 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	UNSPECIFIED

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RRM

PULSE

Dcmax

13.5

7.89

High Voltage High Current Diode

for Pulsed Power Applications

5SDA 27Z1350

Features

Multichip Design with 6 Wafers in Series

For Single Pulse Applications

Voltage Sharing Resistors included

Compact Design

Glazed Ceramic Presspack Housing

High Reliability

RRM

PULSE

di/dt

Repetitive reverse blocking voltage

Permanent DC voltage for 100

FIT failure rate

Max. DC voltage

Max. Pulse Current

Max. current rate of rise

Limiting load integral

Forward voltage drop

Voltage sharing resistors

13.5 kV

9 kV

12 kV

60 kA

0,9 x10

≤

7.89 V

1 MΩ

Tvj = 0 … 125°C

At T

≤

50 °C. Ambient cosmic radiation

at sea level in open air.

For

≤

60 sec at Tj

≤

50°C

Half sine wave, Tj

≤

50°C, tp

≤

500

µs

tp = 500

µs,

Tj = 50 °C

= 4000 A, Tj = 50 °C

8,5 W / wafer level

500 A/µs Single Pulse

ABB Switzerland Ltd reserves the right to change specifications without notice

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