Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
1A SURFACE MOUNT FAST RECOVERY RECTIFIERS
FSM10-005 THRU FSM10-10
FEATURES
FAST SWITCHING
GLASS PASSIVATED DEVICE
IDEAL FOR SURFACE MOUNTED APPLICATIONS
LOW LEAKAGE CURRENT
FAST SWITCHING TIME
SOLDERABLE ENDS
.105(2.67)
.095(2.41)
.022(.60)
.018(.46)
MECHANICAL DATA
CASE: TRANSFER MOLDED MELF, DIMENSIONS
IN INCHES AND (MILLIMETERS)
TERMINALS: SOLDERABLE PER MIL-STD-750, METHOD 2026
POLARITY: CATHODE INDICATED BY COLOR BAND
WEIGHT: 0.135 GRAMS
.205(5.2)
.190(4.8)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
FSM10 FSM10 FSM10 FSM10 FSM10 FSM10 FSM10
RATINGS
SYMBOL
UNITS
-005
-01
-02
-04
-06
-08
-10
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
V
RRM
50
100
200
400
600
800
1000
V
MAXIMUM RMS VOLTAGE
V
RMS
35
70
140
280
420
560
700
V
MAXIMUM DC BLOCKING VOLTAGE
V
DC
50
100
200
400
600
800
1000
V
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT
1.0
A
I
O
AT TL=75°C
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF
30
A
I
FSM
SINE-WAVE SUPERIMPOSED ON RATED LOAD
TYPICAL JUNCTION CAPACITANCE (NOTE 1)
C
J
15
PF
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE
T
STG
T
OP
-55 TO + 150
-55 TO + 125
℃
℃
ELECTRICAL CHARACTERISTICS (A
T
T
A
=25°C UNLESS OTHERWISE NOTED)
FSM10
CHARACTERISTICS
SYMBOL
-005
MAXIMUM FORWARD VOLTAGE AT Io DC
V
F
MAXIMUM REVERSE CURRENT AT 25℃
I
R
FSM10
-01
FSM10
-02
FSM10
-04
1.3
5
FSM10
-06
FSM10
-08
FSM10
UNITS
-10
V
μA
nS
MAXIMUM REVERSE RECOVERY TIME (NOTE 2)
T
RR
150
NOTE:
1. MEASURED AT 1.0 MHZ AND APPLIED REVERSE VOLTAGE OF 4.0 V
2. THERMAL RESISTANCE FROM JUNCTION TO TERMINAL 5.0mm
2
(.013 mm THICK) LAND AREAS
3. REVERSE RECOVERY TEST CONDITIONS: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
250
500
FSM10-005 THRU FSM10-10
Page: 1
RATINGS AND CHARACTERISTIC CURVE FSM10-005 THRU FSM10-10
FIG. 1-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
50Ω
NO INDUCTIVE
10Ω
NO INDUCTIVE
Trr
(-)
D.U.T.
(+)
25 V
dc
(approx)
PULSE
GENERATOR
( NOTE 2 )
1Ω
NON
INDUCTIVE
OSCILLOSCOPE
( NOTE 1 )
+0.5A
0
-0.25A
(-)
(+)
-1.0A
NOTE: 1. RISE TIME=7ns MAX. INPUT
IMPEDANCE=1 MOhms 22PF
2. RISE TIME =10ns MAX. SOURCE
IMPEDANCE=50 OHMS
Fig. 2-MAXIMUM CURRENT DERATING CURVE
1cm
SET TIME BASE
FOR 10/20 ns/cm
Io-AVERAGE RECTIFIED
CURRENT (A)
1.0
0.8
0.6
PEAK FORWARD SURGE CURRENT
AMPERES
0.4
0.2
0
0
20 40
60 80
100 120 140 160 180 200
Fig. 5-MAXIMUM FORWARD SURGE
NUMBER OF CYCLES
30
20
T
A
=75
o
C
8.3ms SINGLE HALF
SINE-WAVE JEDEC METHOD
LEAD TEMPERATURE (
O
C)
FIG. 3-TYPICAL JUNCTION CAPACITANCE
10
1.0 CYCLE
20
CAPACITANCE, pF
Tj=25
o
C
0
1
10
NUMBER OF CYCLES AT 60 HZ
10
100
f = 1 MHz
Vsig = 50 mVp-p
1
1
10
REVERSE VOLTAGE, VOLTS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE
CURRENT, MICRO AMPERES(uA)
INSTANTANEOUS FORWARD
CURRENT, I
F
(A)
100
FIG. 6-TYPICAL INSTANTANEOUS
WARD CHARACTERISTICS
10
100
10
T
J
=100
o
C
1.0
1.0
0.1
.01
0
20
40
60
80
100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE
0.1
Tj=25
o
C
PULSE WIDTH =300us
1% DUTY CYCLE
T
J
=25
o
C
.01
.4
.6
.8
1.0
1.2
1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, (V)
FSM10-005 THRU FSM10-10
Page: 2
MCU
京公网安备 11010802033920号
EEWORLD
