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BP35-10

Description
5 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size175KB,2 Pages
ManufacturerFRONTIER
Websitehttp://www.frontierusa.com/
Download Datasheet Parametric Compare View All

BP35-10 Overview

5 A, SILICON, BRIDGE RECTIFIER DIODE

BP35-10 Parametric

Parameter NameAttribute value
MakerFRONTIER
Reach Compliance Codeunknow
Minimum breakdown voltage1000 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeS-PUFM-D4
Maximum non-repetitive peak forward current400 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current0.00001 µA
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
35A HIGH CURRENT SILICON BRIDGE RECTIFIERS
BP35-005 THRU BP35-10
1.13(28.7)
1.12(28.4)
0.652
(16.6)
HOLE FOR
No.10 SCREW
0.2〞(5.08)diam.
HOLE FOR
No.10 SCREW
FEATURES
CURRENT RATING 35A
REVERSE VOLTAGE RATING UP TO 1000V
TYPICAL IR LESS THAN 1μA
HIGH TEMPERATURE SOLDERING GUARANTEED:
260°C /10 SECOND
0.2〞(5.08)diam.
0.728(18.5)
0.689(17.5)
0.657(16.7)
0.618(15.7)
1.13(28.7)
1.12(28.4)
0.469(11.90)
0.429(10.90)
0.565(14.35)
0.525(13.35)
0.752(19.10)
0.673(17.10)
MECHANICAL DATA
0.094
CASE: METAL HEAT SINK CASE, ELECTRICALLY INSULATED
(2.4)
diam
TERMINALS: UNIVERSAL .25” (6.3mm) FAST ON
DIMENSIONS IN INCHES AND (MILLIMETERS)
MOUNTING METHOD: BOLT DOWN ON HEAT SINK WITH
SILICON THERMAL COMPOUND BETWEEN BRIDGE AND
H*
0.442(11.23)
0.432(10.97)
MOUNTING SURFACE FOR MAXIMUM HEAT TRANSFER
EFFICIENCY
WEIGHT: 20 GRAMS
DIM
0.25
(6.35)
0.042(1.07)
0.038(0.97)
I*
1.00(25.40)
0.90(22.86)
L*
H*
0.442(11.23)
0.432(10.97)
1.200
(30.5) MIN
H*
I*
L*
MIN
0.295(7.5)
0.74(18.80)
1.09(27.89)
MAX
0.311(7.9)
0.84(21.30)
-
REMARK
SUFFIX “S” THIN CASE
SUFFIX “S” THIN CASE
SUFFIX “S” THIN CASE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS, RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
RATINGS
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
MAXIMUM RMS VOLTAGE
MAXIMUM DC BLOCKING VOLTAGE
MAXIMUM AVERAGE FORWARD RECTIFIED OUTPUT
CURRENT AT TC=55°C
PEAK FORWARD SURGE CURRENT SINGLE SINE-WAVE
SUPERIMPOSED ON RATED LOAD
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE
CHARACTERISTICS
MAXIMUM INSTANTANEOUS FORWARD VOLTAGE PER
BRIDGE ELEMENT AT SPECIFIED CURRENT
MAXIMUM REVERSE DC CURRENT AT RATE DC BLOCKING
VOLTAGE PER ELEMENT
NOTE: Suffix No. Versus Different Cases And Terminals
CASE
SUFIX No
TERMINAL
FAST ON TERMINALS
WIRE LEAD TERMINALS
IN LINE PIN CONFIGURATION
NORMAL METAL CASE THIN METAL CASE
NO SUFFIX
W
S
WS
SYMBOL BP35-005 BP35-01 BP35-02 BP35-04 BP35-06 BP35-08 BP35-10 UNITS
V
RRM
V
RMS
V
DC
I
O
I
FSM
T
STG
T
OP
50
35
50
100
70
100
200
140
200
400
280
400
35.0
400
- 55 TO + 175
- 55 TO + 175
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (A
T
T
A
=25°C UNLESS OTHERWISE NOTED)
SYMBOL BP35-005 BP35-01 BP35-02 BP35-04 BP35-06 BP35-08 BP35-10 UNITS
V
F
I
R
1.1
10
V
μA
NORMAL PLASTIC
CASE ALUMINUM BASE
P
PW
L
THIN PLASTIC
CASE ALUMINUM BASE
PS
PWS
LS
BP35-005 THRU BP35-10
Page: 1

BP35-10 Related Products

BP35-10 BP35-02 BP35-04 BP35-06
Description 5 A, SILICON, BRIDGE RECTIFIER DIODE 5 A, SILICON, BRIDGE RECTIFIER DIODE 5 A, SILICON, BRIDGE RECTIFIER DIODE 5 A, SILICON, BRIDGE RECTIFIER DIODE
Maker FRONTIER FRONTIER FRONTIER FRONTIER
Reach Compliance Code unknow unknow unknow unknow
Minimum breakdown voltage 1000 V 200 V 400 V 600 V
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4
Maximum non-repetitive peak forward current 400 A 400 A 400 A 400 A
Number of components 4 4 4 4
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 5 A 5 A 5 A 5 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 200 V 400 V 600 V
Maximum reverse current 0.00001 µA 0.00001 µA 0.00001 µA 0.00001 µA
surface mount NO NO NO NO
Terminal form SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG
Terminal location UPPER UPPER UPPER UPPER

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