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FR207G

Description
2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size1MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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FR207G Overview

2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15

FR207G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingNOT SPECIFIED
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationEFFICIENCY
Phase1
Maximum reverse recovery time0.5000 us
Maximum repetitive peak reverse voltage1000 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current70 A
FR201G-FR207G
50V-1000V
GLASS PASSIVATED FAST RECOVERY RECTIFIERS
2.0A
FEATURES
*
*
*
*
*
*
High reliability
Low leakage
Low forward voltage drop
High current capability
Glass passivated junction
High switching capability
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.38 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=55 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 2.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
FR201G FR202G FR203G FR204G FR205G FR206G FR207G
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
2.0
70
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
150
40
-65 +150
250
500
µA
nS
pF
C
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

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Description 2 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 RECTIFIER DIODE, DO-15 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15

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