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SF55

Description
5 A, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size977KB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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SF55 Overview

5 A, SILICON, RECTIFIER DIODE, DO-201AD

SF51 THRU SF58
50V-600V
SUPER FAST RECTIFIERS
Features
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Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
5.0A
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375
(9.5mm) lead length at T
A
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
SF51
SF52
SF53
SF54
SF55
SF56
SF58
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
,
T
STG
50
35
50
100
70
100
150
105
150
200
140
200
5.0
150.0
300
210
300
400
280
400
600
420
600
0.95
10.0
50.0
35
100.0
30.0
-65 to +150
1.25
V
µA
ns
50.0
pF
C/W
C
Note:
1.Reverse recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375
(9.5mm)lead length,P.C.B. mounted
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

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SF55 SF51 SF52 SF53 SF54 SF56 SF58
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