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UF3M

Description
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size3MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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UF3M Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB

UF3A THRU UF3M
50V-1000V
SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS
3.0A
FEATURES
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Easy pick and place
• Ultrafast recovery times for high efficiency
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• Glass passivated junction
• Pb free product are available : 99% Sn can meet Rohs environment
substance directive request
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic
Terminals: Solder plated, solderable per MIL-STD-202G,Method 2026
Polarity: Indicated by cathode band
Standard packaging: 16mm tape (EIA-481)
Weight: 0.007 ounce, 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PAR AME T E R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T
L
= 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 3 . 0 A
M a xi m um D C R e ve r s e C ur r e nt a t T
A
= 2 5
O
C
R a t e d D C B l o c k i ng V o l t a g e T
A
= 1 0 0
O
C
Ty p i c a l J u n c t i o n c a p a c i t a n c e ( N o t e 2 )
Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 3 )
M a x i m u m R e v e r s e R e c o v e r y Ti m e ( N o t e 1 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B OL
V
RRM
V
RMS
V
DC
I
AV
I
F S M
V
F
1 .0
UF 3 A
50
35
50
UF 3 B
100
70
100
UF 3 D
200
140
200
UF 3 G
400
280
400
3 .0
100
1 .4
1 0 .0
300
75
15
50
- 5 0 TO + 1 5 0
100
63
O
UF 3 J
600
420
600
UF 3 K
800
560
800
UF 3 M
1000
700
1000
U N IT S
V
V
V
A
A
1 .7
V
I
R
uA
C
J
Rθ J L
T
RR
T
J
, T
S TG
pF
C / W
ns
O
C
NOTES:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1 MHz and applied V
r
= 4.0 volts.
3. 8.0 mm
2
( .013mm thick ) land areas.
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

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