EEWORLDEEWORLDEEWORLD

Part Number

Search

PHP4N60E

Description
TRANSISTOR 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size81KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

PHP4N60E Overview

TRANSISTOR 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN, FET General Purpose Power

PHP4N60E Parametric

Parameter NameAttribute value
MakerNXP
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
Other featuresFAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)295 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (ID)4.5 A
Maximum drain-source on-resistance2.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)18 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHP4N60E, PHB4N60E
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 600 V
g
I
D
= 4.5 A
R
DS(ON)
2.5
s
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHP4N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB4N60E is supplied in the SOT404 surface mounting package.
PINNING
PIN
1
2
3
tab
gate
drain
1
source
DESCRIPTION
SOT78 (TO220AB)
tab
SOT404
tab
2
drain
1 23
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
CONDITIONS
T
j
= 25 ˚C to 150˚C
T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ
T
mb
= 25 ˚C; V
GS
= 10 V
T
mb
= 100 ˚C; V
GS
= 10 V
T
mb
= 25 ˚C
T
mb
= 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
±
30
4.5
2.9
18
125
150
UNIT
V
V
V
A
A
A
W
˚C
December 1998
1
Rev 1.200

PHP4N60E Related Products

PHP4N60E PHB4N60E
Description TRANSISTOR 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN, FET General Purpose Power TRANSISTOR 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-404, 3 PIN, FET General Purpose Power
Parts packaging code TO-220AB SOT
package instruction FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 295 mJ 295 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 600 V 600 V
Maximum drain current (ID) 4.5 A 4.5 A
Maximum drain-source on-resistance 2.5 Ω 2.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 18 A 18 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Encountered a difficulty, two 8-bit data failed to be spliced into a 16-bit data
The data sent from the microcontroller serial port 2 is of unsigned char type and is stored in an array unsigned char xdata Rec_Buf2[50]:The data in Rec_Buf2[50] is: DD 03 00 1B 0B 60 00 00 00 F8 01 0...
mige062 51mcu
I want to ask for a communication chip with a communication carrier higher than 300M and can work in a temperature range of -40 to 150
I want to ask for a communication chip with a communication carrier higher than 300M, which can work in a temperature range of -40 to 150 degrees, and a communication rate of more than 9600bps....
随风飞扬123 Wireless Connectivity
A multiple-choice question about CPU in the morning paper of the May 2008 Software Designer Examination
The following is a question from the morning test paper of the software designer exam in May 2008. I just can't figure it out. Could any expert give me some advice? It would be best if I could give a ...
hunt2024 Embedded System
LM series BOOTLOADER entanglement (using IAR debugging)
Download the bootloader file, the sub-files it contains are shown in the figure belowI created a project file with blink.icf as the configuration fileAnd the bl_config.h file is defined as follows#def...
wyplaybbs Microcontroller MCU
MSP430 CSTARTUP
If I change the Interrupt vectors in xcl, do I need to modify my cstartup? If I don't, it will always crash when debugging!!! ~~~ Modify as follows: //------------------------------------------------ ...
sh_rae2011 Microcontroller MCU
Question + When will you use DMA?
[size=4]As the title says, when will you use 430's DMA? Please be more specific... Don't just say when the CPU is not involved, when data is transferred at high speed in different address spaces... Ta...
huixianfxt Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2634  1111  1385  2366  2142  54  23  28  48  44 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号