EMH10 / UMH10N / IMH10A
Transistors
General purpose (dual digital transistors)
EMH10 / UMH10N / IMH10A
Features
1) Two DTC123J chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Units : mm)
EMH10
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
Abbreviated symbol : H10
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
0.2
(6)
1.25
0.15
The following characteristics apply to both DTr
1
and DTr
2
.
2.1
0.1Min.
Equivalent circuit
EMH10 / UMH10N
(3) (2) (1)
R
1
R
2
DTr
1
DTr
2
R
2
R
1
(4) (5)
R
1
=2.2kΩ
R
2
=47kΩ
DTr
2
R
2
R
1
(3) (2)
R
1
=2.2kΩ
R
2
=47kΩ
(6)
0to0.1
Each lead has same dimensions
IMH10A
(4) (5) (6)
R
1
R
2
DTr
1
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : H10
IMH10A
0.3
(1)
(4)
(5)
1.6
2.8
0.15
0.3to0.6
Packaging specifications
Package
Code
Type
EMH10
UMH10N
IMH10A
−
−
−
Basic ordering unit (pieces)
T2R
8000
Taping
TN
3000
−
T110
3000
−
−
0to0.1
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : H10
(3)
(2)
(6)
(1)
(1)
2.0
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
ROHM : EMT6
UMH10N
(4)
(5)
(2)
0.65
(3)
0.5
0.5 0.5
1.0
1.6
EMH10 / UMH10N / IMH10A
Transistors
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Limits
50
12
−5
100
100
150 (TOTAL)
300 (TOTAL)
−55~+150
Unit
V
V
mA
mA
mW
°C
Output current
Power
dissipation
EMH10,UMH10N
IMH10A
Pd
Tstg
∗
1
∗
2
Storage temperature
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
f
T
R
1
R
2
/R
1
Min.
−
1.1
−
−
−
80
−
1.54
17
Typ.
−
−
0.1
−
−
−
250
2.2
21
Max.
0.5
−
0.3
3.6
0.5
−
−
2.86
26
V
V
mA
µA
−
MHz
kΩ
−
Unit
Conditions
V
CC
=5V, I
O
=100µA
V
O
=0.3V, I
O
=5mA
I
O
/I
I
=5mA/0.25mA
V
I
=5V
V
CC
=50V, V
I
=0V
V
O
=5V, I
O
=10mA
V
CE
=10mA, I
E
=−5mA, f=100MHz
−
−
∗
∗
Transition frequency of the device
Electrical characteristic curves
100
50
V
O
=0.3V
OUTPUT CURRENT : Io
(A)
10m
5m
2m
V
CC
=5V
1k
500
V
O
=5V
Ta=100°C
25°C
−40°C
INPUT VOLTAGE : V
I (on)
(V)
20
10
5
2
1
DC CURRENT GAIN : G
I
1m
500
µ
200
µ
100
µ
50
µ
20
µ
10
µ
5
µ
2
µ
1
µ
200
100
50
20
10
5
2
Ta=−40°C
25°C
100°C
Ta=100°C
25°C
−40°C
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m100m
0
0.5
1.0
1.5
2.0
2.5
3.0
1
100µ 200µ 500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
51mcu
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