This low threshold enhancement-mode (normally-off) tran-
sistor utilizes a vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Applications
►
►
►
►
►
►
►
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TP2502
Package Options
TO-243AA (SOT-89)
TP2502N8-G
Die*
TP2502ND
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(Ω)
V
GS(TH)
(max)
(V)
I
D(ON)
(min)
(A)
-20
2.0
-2.4
-2.0
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DGS
±20V
-55°C to +150°C
300°C
BV
DSS
GATE
SOURCE
DRAIN
TO-243AA (SOT-89) (N8)
Product Marking
TP5LW
W = Code for week sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
*
Distance of 1.6 mm from case for 10 seconds.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
TP2502
Thermal Characteristics
Package
TO-243AA
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@ T
A
= 25
O
C
(W)
(
O
C/W)
θ
jc
15
(
O
C/W)
θ
ja
(mA)
I
DR
†
I
DRM
(A)
-630
-3.3
1.6
‡
78
‡
-630
-3.3
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
A
= 25°C unless otherwise specified )
Min
-20
-1.0
-
-
-
-0.4
-2.0
-
-
300
-
-
-
-
-
-
-
-
-
Typ
-
-
3.0
-
-
Max
-
-2.4
4.5
-100
-100
-10
-
-
3.5
2.0
1.2
-
125
70
25
10
11
15
12
-2.0
-
Units
V
V
mV/
O
C
nA
μA
mA
A
Ω
%/
O
C
mmho
pF
Conditions
V
GS
= 0V, I
D
= -2.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= -5.0V, V
DS
= -15V
V
GS
= -10V, V
DS
= -15V
V
GS
= -5.0V, I
D
= -250mA
V
GS
= -10V, I
D
= -1.0A
V
GS
= -10V, I
D
= -1.0A
V
DS
= -15V, I
D
= -1.0A
V
GS
= 0V,
V
DS
= -20V,
f = 1.0 MHz
V
DD
= -20V,
I
D
= -1.0A,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= -1.5A
V
GS
= 0V, I
SD
= -1.5A
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
-
-0.7
-3.3
2.0
1.5
0.75
650
-
-
-
-
-
-
-
-1.3
300
On-state drain current
Static drain-to-source on-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
ns
V
ns
Notes:
1.
All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
2.
Switching Waveforms and Test Circuit
0V
10%
90%
t
(OFF)
INPUT
-10V
PULSE
GENERATOR
t
(ON)
R
GEN
t
F
INPUT
t
d(ON)
0V
t
r
t
d(OFF)
D.U.T.
Output
R
L
10%
OUTPUT
V
DD
90%
10%
90%
V
DD
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
TP2502
Typical Performance Curves
-5
Output Characteristics
-5
Saturation Characteristics
-4
-4
I
D
(amperes)
-3
I
D
(amperes)
V
GS
=
-10V
-9V
-3
V
GS
= -10V
-9V
-2
-8V
-7V
-2
-8V
-7V
-1
-6V
-5V
-4V
-3V
0
-10
-20
-30
-40
-1
-6V
-5V
-4V
-3V
0
-2
-4
-6
-8
-10
0
0
V
DS
(volts)
1.0
V
DS
(volts)
2.0
Transconductance vs. Drain Current
V
DS
= -15V
Power Dissipation vs. Ambient Temperature
0.8
1.6
TO-243AA
G
FS
(siemens)
0.4
T
A
= 25°C
P
D
(watts)
0.6
T
A
= -55°C
1.2
0.8
T
A
= 150°C
0.2
0.4
0
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
0
25
50
75
100
125
150
I
D
(amperes)
-10
T
A
(°C)
1.0
Maximum Rated Safe Operating Area
TO-243AA(pulsed)
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
I
D
(amperes)
-1.0
TO-243AA (DC)
0.6
-0.1
T
A
= 25°C
0.4
TO-243AA
0.2
T
A
= 25°C
P
D
= 1.6W
-0.01
-0.1
0
-1.0
-10
-100
0.001
0.01
0.1
1
10
V
DS
(volts)
t
p
(seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
TP2502
Typical Performance Curves
(cont.)
1.1
BV
DSS
Variation with Temperature
5
On-Resistance vs. Drain Current
4
V
GS
= -5V
V
GS
= -10V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
3
1.0
2
1
0.9
-50
0
50
100
150
0
0
-1
-2
-3
-4
-5
T
j
(°C)
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.0
1.4
Transfer Characteristics
-5
V
DS
= -15V
-4
R
DS (ON)
@ -10V, -1A
1.6
I
D
(amperes)
-3
T
A
= -55°C
1.2
V
(th)
@ -1mA
1.2
1.0
0.8
0.8
0.4
0.6
-2
25°C
150°C
-1
0
0
-2
-4
-6
-8
-10
-50
0
50
100
150
0
V
GS
(volts)
200
T
j
(°C)
-10
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
150
-8
V
DS
= -10V
200 pF
C (picofarads)
100
C
ISS
50
V
GS
(volts)
-6
-4
V
DS
= -40V
80 pF
C
OSS
-2
C
RSS
0
0
0
-10
-20
-30
-40
0
0.5
1.0
1.5
2.0
2.5
V
DS
(volts)
Q
G
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
TP2502
3-Lead TO-243AA (SOT-89) Package Outline (N8)
b
b1
Symbol
Dimensions
(mm)
MIN
NOM
MAX
A
1.40
-
1.60
b
0.44
-
0.56
b1
0.36
-
0.48
C
0.35
-
0.44
D
4.40
-
4.60
D1
1.62
-
1.83
E
2.29
-
2.60
E1
2.13
-
2.29
e
1.50
BSC
e1
3.00
BSC
H
3.94
-
4.25
L
0.89
-
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
Drawings not to scale.
Supertex Doc. #:
DSPD-3TO243AAN8, Version D070908.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
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