K4T1G084QD
K4T1G164QD
DDR2 SDRAM
1Gb D-die DDR2 SDRAM Specification
60FBGA & 84FBGA with Lead-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
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Rev. 1.2 July 2008
K4T1G084QD
K4T1G164QD
DDR2 SDRAM
Table of Contents
1.0 Ordering Information ................................................................................................................... 4
2.0 Key Features ................................................................................................................................ 4
3.0 Package Pinout/Mechanical Dimension & Addressing ............................................................ 5
3.1 x8 package pinout (Top View) : 60ball FBGA Package
....................................................................... 5
3.2 x16 package pinout (Top View) : 84ball FBGA Package
..................................................................... 6
3.3 FBGA Package Dimension (x8)
....................................................................................................... 7
3.4 FBGA Package Dimension (x16)
..................................................................................................... 8
4.0 Input/Output Functional Description ......................................................................................... 9
5.0 DDR2 SDRAM Addressing ........................................................................................................ 10
6.0 Absolute Maximum DC Ratings ................................................................................................ 11
7.0 AC & DC Operating Conditions ................................................................................................ 11
7.1 Recommended DC Operating Conditions (SSTL - 1.8)
..................................................................... 11
7.2 Operating Temperature Condition
................................................................................................ 12
7.3 Input DC Logic Level
................................................................................................................... 12
7.4 Input AC Logic Level
................................................................................................................... 12
7.5 AC Input Test Conditions
............................................................................................................ 12
7.6 Differential input AC logic Level
................................................................................................... 13
7.7 Differential AC output parameters
................................................................................................ 13
8.0 ODT DC electrical characteristics ............................................................................................ 13
9.0 OCD default characteristics ...................................................................................................... 14
10.0 IDD Specification Parameters and Test Conditions ............................................................. 15
11.0 DDR2 SDRAM IDD Spec Table ................................................................................................ 17
12.0 Input/Output capacitance ........................................................................................................ 18
13.0 Electrical Characteristics & AC Timing for DDR2-800/667/533/400 ..................................... 18
13.1 Refresh Parameters by Device Density
........................................................................................ 18
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
............................................. 18
13.3 Timing parameters by speed grade (DDR2-800 and DDR2-667)
....................................................... 19
13.4 Timing parameters by speed grade (DDR2-533 and DDR2-400)
....................................................... 21
14.0 General notes, which may apply for all AC parameters ....................................................... 23
15.0 Specific Notes for dedicated AC parameters ........................................................................ 25
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Rev. 1.2 July 2008
K4T1G084QD
K4T1G164QD
DDR2 SDRAM
Year
2007
2007
2007
2008
- Initial Release
- Updated general and specific notes for AC parameters
- Typo correction
- Applied JEDEC update(JESD79-2E) on AC timing table
History
Revision History
Revision
1.0
1.1
1.11
1.2
Month
March
July
November
July
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Rev. 1.2 July 2008
K4T1G084QD
K4T1G164QD
1.0 Ordering Information
Org.
128Mx8
64Mx16
DDR2-800 5-5-5
DDR2-800 6-6-6
DDR2-667 5-5-5
K4T1G084QD-ZC(L)E6
K4T1G164QD-ZC(L)E6
DDR2-533 4-4-4
DDR2 SDRAM
DDR2-400 3-3-3
Package
60 FBGA
84 FBGA
K4T1G084QD-ZC(L)E7 K4T1G084QD-ZC(L)F7
K4T1G164QD-ZC(L)E7 K4T1G164QD-ZC(L)F7
K4T1G084QD-ZC(L)D5 K4T1G084QD-ZC(L)CC
K4T1G164QD-ZC(L)D5 K4T1G164QD-ZC(L)CC
Note :
1. Speed bin is in order of CL-tRCD-tRP.
2. RoHS Compliant.
2.0 Key Features
Speed
CAS Latency
tRCD(min)
tRP(min)
tRC(min)
DDR2-800 5-5-5
5
12.5
12.5
57.5
DDR2-800 6-6-6
6
15
15
60
DDR2-667 5-5-5
5
15
15
60
DDR2-533 4-4-4
4
15
15
60
DDR2-400 3-3-3
3
15
15
55
Units
tCK
ns
ns
ns
• JEDEC standard V
DD
= 1.8V ± 0.1V Power Supply
• V
DDQ
= 1.8V ± 0.1V
• 200 MHz f
CK
for 400Mb/sec/pin, 267MHz f
CK
for 533Mb/sec/
pin, 333MHz f
CK
for 667Mb/sec/pin, 400MHz f
CK
for 800Mb/
sec/pin
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latency: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/Nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-
strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
- 50ohm ODT
- High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than T
CASE
85°C,
3.9us at 85°C < T
CASE
< 95
°C
• All of products are Lead-Free and RoHS compliant
The 1Gb DDR2 SDRAM is organized as a 16Mbit x 8 I/Os x
8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous
device achieves high speed double-data-rate transfer rates of up
to 800Mb/sec/pin (DDR2-800) for general applications.
The chip is designed to comply with the following key DDR2
SDRAM features such as posted CAS with additive latency, write
latency = read latency - 1, Off-Chip Driver(OCD) impedance
adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair
of externally supplied differential clocks. Inputs are latched at the
crosspoint of differential clocks (CK rising and CK falling). All I/Os
are synchronized with a pair of bidirectional strobes (DQS and
DQS) in a source synchronous fashion. The address bus is used
to convey row, column, and bank address information in a RAS/
CAS multiplexing style. For example, 1Gb(x8) device receive 14/
10/3 addressing.
The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power
supply and 1.8V ± 0.1V V
DDQ
.
The 1Gb DDR2 device is available in 60ball FBGAs(x8) and in
84ball FBGAs(x16).
Note : The functionality described and the timing specifications included in
this data sheet are for the DLL Enabled mode of operation.
Note : This data sheet is an abstract of full DDR2 specification and does not cover the common features which are described in “DDR2 SDRAM Device
Operation & Timing Diagram”.
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Rev. 1.2 July 2008
K4T1G084QD
K4T1G164QD
3.0 Package Pinout/Mechanical Dimension & Addressing
3.1 x8 package pinout (Top View) : 60ball FBGA Package
1
V
DD
DQ6
V
DDQ
DQ4
V
DDL
DDR2 SDRAM
2
NU/
RDQS
3
V
SS
DM
/
RDQS
7
A
B
C
D
E
F
G
H
J
K
L
V
SSQ
DQS
V
DDQ
DQ2
V
SSDL
RAS
CAS
A2
A6
A11
NC
8
DQS
V
SSQ
DQ0
V
SSQ
CK
CK
CS
A0
A4
A8
A13
9
V
DDQ
DQ7
V
DDQ
DQ5
V
DD
ODT
V
SSQ
DQ1
V
SSQ
V
REF
CKE
V
DDQ
DQ3
V
SS
WE
BA1
A1
A5
A9
NC
BA2
BA0
A10/AP
V
DD
V
SS
A3
A7
V
SS
V
DD
A12
Note:
1. Pins B3 and A2 have identical capacitance as pins B7 and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS are identical in
function and timing to strobe pair DQS & DQS and input masking function
is disabled.
3. The function of DM or RDQS/RDQS are enabled by EMRS command.
4. V
DDL
and V
SSDL
are power and ground for the DLL.
Ball Locations (x8)
1
A
B
C
D
E
F
G
H
J
K
L
: Populated Ball
+ : Depopulated Ball
Top View
(See the balls through the package)
2
3
4
5
6
7
8
9
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
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Rev. 1.2 July 2008
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