FAN7093_F085
High Current PN Half Bridge
December 2011
FAN7093_F085
High Current PN Half Bridge Rectifier
47 A, Max path resistance 30.5 m at
150 °C
©2011
Fairchild Semiconductor Corporation
FAN7093_F085 Rev. C1
1
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FAN7093_F085
High Current PN Half Bridge
December 2011
1
Features
• Path resistance of max. 30.5 m at 150 °C
• Low quiescent current of max. 270
µA
• PWM capability of up to 60 kHz combined with active
freewheeling
• Switched mode current limitation for reduced power
dissipation in over current
• Current limitation level of typical 46 A
• Status flag diagnosis with low and high side current sense
capability
• Over temperature shut down with latch behavior
• Shorted load protection with latch behavior
• Over voltage lock out
• Under voltage shut down
• Driver circuit with logic level inputs
• Typical slew rate of 1 V/µs with open SR pin
• Adjustable slew rates for optimized EMI
TO263-7L
2
Brief functional Description
The FAN7093_F085 is an integrated high current half bridge for
electric motor drive applications. It contains one P-channel high-
side MOSFET and one N-channel low-side MOSFET with an
integrated control IC in one package. With the P-channel high-
side switch the need for a charge pump is eliminated and
therefore minimizing EMI. Pins IN and
are logic level inputs
and control the half bridge outputs. The diagnostic current output
pin IS outputs a proportional current through the half bridge
MOSFETS. The IS pin output represents current for either the P-
Chan or the N-Chan depending on which is active. The part is
protected against short to Battery or ground, over current, over-
temperature, over voltage and under voltage. The
FAN7093_F085 provides a cost optimized solution for protected
high current PWM motor drives with very low board space
consumption.
FAN7093_F085 Rev. C1
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FAN7093_F085
High Current PN Half Bridge
December 2011
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Block Diagram
The FAN7093_F085 is a high current half-bridge and contains three separate chips in one package:
One P-channel high-side MOSFET and one N-channel low-side MOSFET together with a control IC.
All three chips are mounted on one common lead frame, using chip on chip and chip by chip
technology. The power FETs are vertical MOS transistors to ensure minimum on state resistance.
Using a P-channel high-side switch eliminates a charge pump and reduces EMI. A microcontroller is
able to control the logic level inputs IN and
of the half-bridge. The diagnostic pin IS is a current
output stage which delivers a proportional current through the P-channel and N-channel MOSFETS
depending on which is being activated with IN/
pin forcing conditions. In case of a short to
VBATT or ground the IS pin acts as an error Flag, which can be detected as a logic high level through
an attached microcontroller. In an over current situation the control IC turns off the MOSFETS and
retries to turn them back on after a cool down time of typical 140us. The control IC protects the
MOSFETS also against over voltage, under voltage and over temperature. The dead time to prevent
shoot through between P- and N- channel MOSFET is generated by the control IC too. The slew rate of
the outputs can be adjusted through an external resistor connected to the SR pin. The FAN7093_F085
can be combined with other FAN7093_F085 to form Full-bridge and also 3-phase drive configurations.
Figure 1 FAN7093_F085 Block diagram
FAN7093_F085 Rev. C1
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FAN7093_F085
High Current PN Half Bridge
December 2011
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4.1
Pin configuration
Pin assignment
B
P
S
Figure 2 Pin assignment for FAN7093_F085B, FAN7093_F085P and FAN7093_F085S
4.2
Pin
1
2
3
Pin Definitions and Functions
Symbol
GND
IN
I/O
-
I
I
Function
Ground
Input
Defines whether high- or lowside switch is activated
Inhibit
When set to low device goes in sleep mode and resets over
temperature and HS and LS short latch
Power output of the bridge
Slew Rate
The slew rate of the power switches can be adjusted by connecting
a resistor between SR and GND
Current Sense and Diagnostics
Supply
4,8
5
OUT
SR
O
I
6
7
IS
V
BATT
O
-
Bold type pins need power wiring
Note: See truth table in section 7.3.5 on page 14 for details
FAN7093_F085 Rev. C1
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FAN7093_F085
High Current PN Half Bridge
December 2011
5
5.1
General Product Characteristics
Absolute Maximum Ratings
1)
Absolute Maximum Ratings
otherwise specified)
T
j
= -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless
Pos.
5.1.1
5.1.2
5.1.3
5.1.4
5.1.5
5.1.6
5.1.7
Parameter
Supply Voltage
Logic Input Voltage
Voltage at SR Pin
Voltage at IS Pin
HS/LS Continuous Drain Current
HS/LS Pulsed Drain Current
HS/LS PWM Current
2)
2)
2)
Symbol
Min.
-0.3
-0.3
-0.3
-0.3
Typ.
Max.
45
45
1.5
7.5
Unit
V
V
V
V
A
A
A
Conditions
–
–
–
–
V
BATT
V
IN (H)
V
SR
V
IS
I
D(HS)
I
D(LS)
I
D(HS)
I
D(LS)
I
D(HS)
I
D(LS)
T
j
T
stg
-46/46
-90/90
-55/55
T
C
< 85°C
T
C
< 85°C
single pulse < 5us
T
C
< 125°C
f = 1kHz, DC = 50%
Temperatures
5.1.8
Junction Temperature
5.1.9
Storage Temperature
-40
-55
150
150
°C
°C
–
–
ESD Susceptibility
5.1.10
IN,
, SR, IS
V
ESD
V
ESD
-2
-6
2
6
kV
kV
HBM
HBM
3)
3)
5.1.11
OUT, GND, V
BATT
1) Not subject to production test, specified by design
2) Maximum reachable current may be smaller depending on current limitation level
3) ESD susceptibility, HBM according to AEC_Q100-004C /JESD22-A114-B (1.5 k , 100 pF)
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data
sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for
continuous repetitive operation
FAN7093_F085 Rev. C1
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