FDD4685_F085 P-Channel PowerTrench
®
MOSFET
December 2010
FDD4685_F085
®
P-Channel PowerTrench MOSFET
-40V, -32A, 35mΩ
Features
Typ r
DS(on)
= 23mΩ at V
GS
= -10V, I
D
= -8.4A
Typ r
DS(on)
= 30mΩ at V
GS
= -4.5V, I
D
= -7A
Typ Q
g(TOT)
= 19nC at V
GS
= -5V
High performance trench technology for extremely low
r
DS(on)
RoHS Compliant
Qualified to AEC Q101
Applications
Inverter
Power Supplies
©2010 Fairchild Semiconductor Corporation
FDD4685_F085 Rev. C
1
www.fairchildsemi.com
FDD4685_F085 P-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
Drain to Source Voltage
V
GS
I
D
E
AS
P
D
Gate to Source Voltage
Drain Current Continuous (T
C
<90 C, V
GS
= 10V)
Pulsed
Single Pulse Avalanche Energe
Power Dissipation
Dreate above 25
o
C
o
Parameter
Ratings
-40
±20
-32
See Figure 4
(Note 1)
121
83
0.56
-55 to +175
Units
V
V
A
mJ
W
W/
o
C
o
C
T
J
, T
STG
Operating and Storage Temperature
Thermal Characteristics
R
θJC
R
θJA
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
2
1.8
40
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDD4685
Device
FDD4685_F085
Package
TO252
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= -250μA, V
GS
= 0V
ID = -250μA, referenced to 25°C
V
DS
= -32V,
V
GS
= ±20V
-40
-
-
-
-
-33
-
-
-
-
-1
±100
V
mV/°C
μA
nA
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
r
DS(on)
g
FS
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= -250μA
ID = –250μA, referenced to 25°C
I
D
= -8.4A, V
GS
= -10V
Drain to Source On Resistance
I
D
= -7A, V
GS
= -4.5V
I
D
= -8.4A, V
GS
= -10V,
T
J
= 150
o
C
I
D
= –8.4A, V
DS
= –5V,
-1
-
-
-
-
-
-1.6
4.9
23
30
38
23
-3
-
27
35
45
-
S
mΩ
V
mV/°C
Forward Transconductance
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
V
DD
= -20V, V
GS
= -5V
I
D
= -8.4A
V
DS
= -20V, V
GS
= 0V,
f = 1MHz
f = 1MHz
-
-
-
-
-
-
-
1790
260
140
4
19
5.6
6.1
2380
345
205
-
27
-
-
pF
pF
pF
Ω
nC
nC
nC
FDD4685_F085 Rev. C
2
www.fairchildsemi.com
FDD4685_F085 P-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
DD
= -20V, I
D
= -8.4A
V
GS
= -10V, R
GEN
= 6Ω
-
-
-
-
8
15
34
14
16
27
55
26
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= -8.4A, V
GS
=0V
I
SD
= -8.4A, dI
SD
/dt = 100A/μs
-
-
-
-0.85
30
31
-1.2
45
47
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 3mH, I
AS
= 9A, V
GS
= 10V, V
DD
= 40V during the inductor charging time and 0V during the time in avalanche.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDD4685_F085 Rev. C
3
www.fairchildsemi.com
FDD4685_F085 P-Channel PowerTrench
®
MOSFET
Typical Characteristics
POWER DISSIPATION MULTIPLIER
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
-I
D
, DRAIN CURRENT (A)
40
30
20
10
R
θ
JC
= 1.8 C/W
o
CURRENT LIMITED
BY PACKAGE
V
GS
= -10V
V
GS
= -4.5V
0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE
(
o
C
)
175
25
50
75
100
125
o
150
175
T
C
, CASE TEMPERATURE
(
C
)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
0.1
P
DM
0.01
t
1
SINGLE PULSE
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
0.001
-5
10
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
V
GS
= 10V
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
-I
DM
,
PEAK CURRENT (A)
100
SINGLE PULSE
10
-5
10
10
-4
10
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
-1
10
0
10
1
Figure 4. Peak Current Capability
FDD4685_F085 Rev. C
4
www.fairchildsemi.com
FDD4685_F085 P-Channel PowerTrench
®
MOSFET
Typical Characteristics
1000
-I
AS
, AVALANCHE CURRENT (A)
200
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
-I
D
, DRAIN CURRENT (A)
100
100us
10
SINGLE PULSE
TJ = MAX RATED
TC
= 25oC
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1ms
10ms
DC
10
STARTING T
J
= 25
o
C
1
STARTING T
J
= 150
o
C
0.1
1
1
10
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
90
1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
100
-I
D
, DRAIN CURRENT (A)
80
V
GS
= -10V
100
80
60
40
20
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -5V
T
J
= -55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -6V
V
GS
= -4.5V
V
GS
= -4V
-I
D
, DRAIN CURRENT (A)
60
40
20
0
T
J
= 25 C
T
J
= 175 C
o
o
V
GS
= -3V
0
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
6
0
1
2
3
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
I
D
=
-8.4A
r
DS(on)
, DRAIN TO SOURCE
ON-RESISTANCE
(
m
Ω
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
120
100
80
60
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
I
D
= -8.4A
V
GS
= -10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
J
= 175
o
C
40
20
T
J
= 25
o
C
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE
(
o
C
)
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD4685_F085 Rev. C
5
www.fairchildsemi.com
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