EEWORLDEEWORLDEEWORLD

Part Number

Search

TIP117

Description
Bipolar Transistors;PNP;-2A;-100V;TO-220
CategoryDiscrete semiconductor   
File Size213KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

TIP117 Online Shopping

Suppliers Part Number Price MOQ In stock  
TIP117 - - View Buy Now

TIP117 Overview

Bipolar Transistors;PNP;-2A;-100V;TO-220

TIP117 Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-based maximum capacity200 pF
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)500
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment2 W
Maximum power dissipation(Abs)50 W
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
VCEsat-Max2.5 V
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 1000(Min)@ I
C
= -1
A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= -100V(Min)
·Low
Collector-Emitter Saturation Voltage-
: V
CE(sat)
= -2.5V(Max)@ I
C
= -
2A
·Complement
to Type TIP112
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
TIP117
APPLICATIONS
·Designed
for general purpose amplifier and low speed
switching applications
.
ABSOLUTE MAXIMUM RATINGS (T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
T
C
=25℃
Collector Power Dissipation
T
a
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-100
-100
-5
-2
-4
-50
50
2
150
-65~150
UNIT
V
V
V
A
A
mA
P
C
W
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
2.5
62.5
1
UNIT
℃/W
℃/W
isc website:
www.iscsemi.com
isc
&
iscsemi
is registered trademark

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1565  321  1505  990  1576  32  7  31  20  37 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号