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EN25Q64-104HIP

Description
FLASH 3V PROM
Categorystorage    storage   
File Size1MB,60 Pages
ManufacturerEon
Websitehttp://www.essi.com.tw/
Environmental Compliance
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EN25Q64-104HIP Overview

FLASH 3V PROM

EN25Q64-104HIP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEon
Parts packaging codeSOIC
package instructionSOP,
Contacts8
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum clock frequency (fCLK)104 MHz
JESD-30 codeS-PDSO-G8
length5.275 mm
memory density67108864 bi
Memory IC TypeFLASH
memory width1
Number of functions1
Number of terminals8
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX1
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeSQUARE
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Maximum seat height2.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width5.275 mm
EN25Q64
EN25Q64
64 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
64 M-bit Serial Flash
- 64 M-bit/8192 K-byte/32768 pages
- 256 bytes per programmable page
-
-
-
-
-
-
Standard, Dual or Quad SPI
Standard SPI: CLK, CS#, DI, DO, WP#
Dual SPI: CLK, CS#, DQ
0
, DQ
1
, WP#
Quad SPI: CLK, CS#, DQ
0
, DQ
1
, DQ
2
, DQ
3
High performance
104MHz clock rate for one data bit
80MHz clock rate for two data bits
50MHz clock rate for four data bits
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
-
-
-
-
High performance program/erase speed
Page program time: 1.3ms typical
Sector erase time: 60ms typical
Block erase time 300ms typical
Chip erase time: 30 seconds typical
Lockable 512 byte OTP security sector
Minimum 100K endurance cycle
-
-
-
-
-
-
-
Package Options
8 pins SOP 200mil body width
8 contact VDFN (5x6mm)
8 contact VDFN (6x8mm)
8 pins PDIP
16 pins SOP 300mil body width
24 balls TFBGA (6x8mm)
All Pb-free packages are RoHS compliant
Low power consumption
- 12 mA typical active current
- 1
μA
typical power down current
-
-
-
Uniform Sector Architecture:
2048 sectors of 4-Kbyte
128 blocks of 64-Kbyte
Any sector or block can be erased individually
Industrial temperature Range
GENERAL DESCRIPTION
The EN25Q64 is a 64 Megabit (8192K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q64 supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ
0
(DI),
DQ
1
(DO), DQ
2
(WP#) and DQ
3
(NC). SPI clock frequencies of up to 80MHz are supported allowing
equivalent clock rates of 160MHz for Dual Output when using the Dual Output Fast Read instructions,
and SPI clock frequencies of up to 50MHz are supported allowing equivalent clock rates of 200MHz for
Quad Output when using the Quad Output Fast Read instructions. The memory can be programmed 1
to 256 bytes at a time, using the Page Program instruction.
The EN25Q64 is designed to allow either single
Sector/Block
at a time or full chip erase operation. The
EN25Q64 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector
or block
.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. J, Issue Date: 2011/07/07

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