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BCP53T

Description
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
CategoryDiscrete semiconductor    The transistor   
File Size1MB,22 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BCP53T Overview

Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin

BCP53T Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
ConfigurationSINGLE
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BCP53; BCX53; BC53PA
80 V, 1 A PNP medium power transistors
Rev. 9 — 19 October 2011
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP53
BCX53
BC53PA
[1]
Type number
[1]
NPN complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP56
BCX56
BC56PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
High-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse; t
p
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
80
1
2
Unit
V
A
A
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