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BSM50GP60G

Description
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel,
CategoryDiscrete semiconductor    The transistor   
File Size178KB,12 Pages
ManufacturerEUPEC [eupec GmbH]
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BSM50GP60G Overview

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel,

BSM50GP60G Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionFLANGE MOUNT, R-XUFM-X35
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)70 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X35
Number of components7
Number of terminals35
Maximum operating temperature125 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)315 ns
Nominal on time (ton)105 ns
VCEsat-Max2.55 V
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GP60G
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
RMS forward current per chip
Dauergleichstrom
DC forward current
Stoßstrom Grenzwert
surge forward current
Grenzlastintegral
I t - value
2
V
RRM
I
FRMSM
T
C
= 80°C
t
P
= 10 ms, T
vj
=
t
P
= 10 ms, T
vj
=
25°C
25°C
I
d
I
FSM
I t
2
1600
40
50
315
260
500
340
V
A
A
A
A
As
As
2
2
t
P
= 10 ms, T
vj
= 150°C
t
P
= 10 ms, T
vj
= 150°C
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Wechselrichter/ Diode Inverter
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral
I
2
t - value
Tc = 80 °C
t
P
= 1 ms
V
R
= 0V, t
p
= 10ms, T
vj
= 125°C
I
F
I
FRM
I
2
t
50
100
760
A
A
A
2
s
Tc = 80 °C
T
C
= 25 °C
t
P
= 1 ms,
T
C
= 25°C
T
C
= 80 °C
V
CES
I
C,nom.
I
C
I
CRM
P
tot
V
GES
600
50
70
100
250
+/- 20V
V
A
A
A
W
V
Transistor Brems-Chopper/ Transistor Brake-Chopper
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Diode Brems-Chopper/ Diode Brake-Chopper
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
prepared by: Andreas Schulz
approved by: Robert Severin
Tc = 80 °C
t
P
= 1 ms
I
F
I
FRM
12,5
25
A
A
T
C
= 80 °C
T
C
= 25 °C
t
P
= 1 ms, T
C
= 80°C
T
C
= 25°C
V
CES
I
C,nom.
I
C
I
CRM
P
tot
V
GES
600
25
35
50
130
+/- 20V
V
A
A
A
W
V
date of publication:29.03.2001
revision: 3
1(11)
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