BCV62/T3 datasheet, PDF - EEWORLD Datasheet

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BCV62/T3: DescriptionTRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size146KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BCV62/T3 Overview

TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal

BCV62/T3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	CURRENT MIRROR
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.65 V

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BCV62

PNP general-purpose double transistors

Rev. 4 — 26 July 2010

Product data sheet

1. Product profile

1.1 General description

PNP general-purpose double transistors in a small SOT143B Surface-Mounted

Device (SMD) plastic package.

Table 1.

Product overview

Package

NXP

BCV62

BCV62A

BCV62B

BCV62C

SOT143B

JEITA

BCV61

BCV61A

BCV61B

BCV61C

NPN complement

Type number

1.2 Features and benefits

Low current (max. 100 mA)

Low voltage (max. 30 V)

Matched pairs

AEC-Q101 qualified

Small SMD plastic package

1.3 Applications

Applications with working point independent of temperature

Current mirrors

1.4 Quick reference data

Table 2.

Symbol

CEO

Quick reference data

Parameter

collector-emitter voltage

collector current

DC current gain

−5

V; I

−100 μA

−5

V; I

−2

Conditions

open base

Min

100

Typ

Max

−30

−100

800

Unit

Per transistor

Transistor TR1

BCV62/T3 Related Products

	BCV62/T3	BCV62 T/R	BCV62A,235	BCV62B/T3	BCV62C,235	BCV62-T
Description	TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal	Bipolar small signal pnp 30v 100ma	TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal
Maker	NXP	NXP	NXP	NXP	NXP	NXP
Configuration	CURRENT MIRROR	Dual Common Base	CURRENT MIRROR	CURRENT MIRROR	CURRENT MIRROR	CURRENT MIRROR
Maximum operating temperature	150 °C	+ 150 C	150 °C	150 °C	150 °C	150 °C
package instruction	SMALL OUTLINE, R-PDSO-G4	-	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	-	4	4	4	4
Reach Compliance Code	unknown	-	unknown	compliant	unknown	unknown
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	30 V	-	30 V	30 V	30 V	30 V
Minimum DC current gain (hFE)	100	-	100	220	420	100
JESD-30 code	R-PDSO-G4	-	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	-	1	1	1	1
Number of terminals	4	-	4	4	4	4
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	-	PNP	PNP	PNP	PNP
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	-	YES	YES	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	-	100 MHz	100 MHz	100 MHz	100 MHz

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