Single N-channel MOSFET
ELM34404AA-N
■General description
ELM34404AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
Vds=60V
Id=5.5A
Rds(on) < 55mΩ (Vgs=10V)
Rds(on) < 75mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj, Tstg
Limit
60
±
20
Unit
V
V
A
A
W
°C
Note
5.5
4.5
20
2.5
1.3
-55 to 150
3
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Steady-state
Symbol
Rθja
Typ.
Max.
50
Unit
°C/W
Note
■Pin configuration
SOP-8(TOP VIEW)
1
2
3
4
■Circuit
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
G
S
D
8
7
6
5
4- 1
Single N-channel MOSFET
ELM34404AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Ciss
Coss Vgs=0V, Vds=25V, f=1MHz
Crss
Qg
Qgs
Qgd
td(on)
tr
tf
Vgs=10V, Vds=30V, Id≈1A
td(off) Rgen=6Ω
Vgs=10V, Vds=30V, Id=5.5A
650
80
35
12.5
2.4
2.6
11
8
19
6
20
18
35
15
18.0
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
2
2
2
2
2
2
2
Symbol
Condition
Min.
60
1
10
±
100
Ta=25°C
Typ. Max. Unit Note
V
μA
nA
V
A
42
55
14
55
75
1
1.3
2.6
mΩ
mΩ
S
V
A
A
1
1
1
1
3
BVdss Id=250μA, Vgs=0V
Idss
Igss
Vds=48V, Vgs=0V
Vds=40V, Vgs=0V, Tj=55°C
Vds=0V, Vgs=
±
20V
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
Rds(on)
Gfs
Vsd
Is
Ism
Vgs=10V, Id=5.5A
Vgs=4.5V, Id=4.5A
Vds=10V, Id=5.5A
If=1A, Vgs=0V
1.0
20
1.5
2.5
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%;
2. Independent of operating temperature;
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4- 2
NIKO-SEM
Single
Logic Level Enhancement
N-Channel
N-channel MOSFET
Mode Field Effect Transistor
ELM34404AA-N
P5506BVG
SOP-8
Lead-Free
■Typical electrical and thermal characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
V
GS
= 0V
10
Is - Reverse Drain Current(A)
1
0.1
0.01
0.001
0.0001
T
A
= 125° C
25° C
-55° C
0
0.6
0.2
0.4
0.8
V
SD
- Body Diode Forward Voltage(V)
1.0
1.2
4- 3
GD32 MCU
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