ELM34419AA-N datasheet, PDF - EEWORLD Datasheet

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ELM34419AA-N: DescriptionSingle P-channel MOSFET; CategoryDiscrete semiconductor The transistor; File Size339KB，4 Pages; ManufacturerELM Technology Corporation

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ELM34419AA-N Overview

Single P-channel MOSFET

ELM34419AA-N Parametric

Parameter Name	Attribute value
Maker	ELM Technology Corporation
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	43 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.02 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	55 A
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON

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Single P-channel MOSFET

ELM34419AA-N

■General description

ELM34419AA-N uses advanced trench technology to

provide excellent Rds(on), low gate charge and low gate

resistance.

■Features

•

Vds=-30V

Id=-10A

Rds(on) < 20mΩ (Vgs=-10V)

Rds(on) < 35mΩ (Vgs=-4.5V)

■Maximum absolute ratings

Parameter

Drain-source voltage

Gate-source voltage

Continuous drain current

Pulsed drain current

Avalanche current

Avalanche energy

Power dissipation

Junction and storage temperature range

L=0.1mH

Ta=25°C

Ta=70°C

Ta=25°C

Ta=70°C

Symbol

Vds

Vgs

Idm

Iar

Eas

Tj, Tstg

Limit

-30

Unit

°C

Note

-10

-8

-55

-29

-55 to 150

■Thermal characteristics

Parameter

Maximum junction-to-case

Maximum junction-to-ambient

Symbol

Rθjc

Rθja

Typ.

Max.

Unit

°C/W

Note

■Pin configuration

SOP-8(TOP VIEW)

■Circuit

Pin No.

Pin name

SOURCE

GATE

DRAIN

4- 1

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