Single P-channel MOSFET
ELM34421AA-N
■General description
ELM34421AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
■Features
•
•
•
•
Vds=-30V
Id=-15A
Rds(on) < 7.5mΩ (Vgs=-10V)
Rds(on) < 12mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
Power dissipation
Junction and storage temperature range
L=0.1mH
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Ias
Eas
Pd
Tj, Tstg
Limit
-30
±25
-15
-11
-67
-66
218
2.5
1.6
-55 to 150
Unit
V
V
A
A
A
mJ
W
°C
3
Note
■Thermal characteristics
Parameter
Maximum junction-to-case
Maximum junction-to-ambient
Symbol
Rθjc
Rθja
Typ.
Max.
25
50
Unit
°C/W
°C/W
Note
■Pin configuration
SOP-8(TOP VIEW)
1
8
■Circuit
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE
SOURCE
SOURCE
GATE
DRAIN
DRAIN
DRAIN
DRAIN
G
S
D
2
3
4
7
6
5
4- 1
Single P-channel MOSFET
ELM34421AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Symbol
Condition
Min.
-30
-1
-10
±100
-1.0
-1.7
4.8
6.8
25
-1.2
-2
5590
1070
889
Vgs=-10V, Vds=-15V
Id=-15A
120
16
30
10
16
200
100
If=-15A, dI/dt=100A/μs
42
30
-3.0
7.5
12.0
Ta=25°C
Typ. Max. Unit Note
V
μA
nA
V
mΩ
mΩ
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
2
2
2
2
2
2
2
1
1
1
BVdss Id=-250μA, Vgs=0V
Idss
Igss
Rds(on)
Gfs
Vsd
Is
Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
Qg
Qgs
Qgd
td(on)
tr
Vgs=-10V, Vds=-15V
td(off) Id≈-15A, Rgen=6Ω
tf
trr
Qrr
Vds=-24V, Vgs=0V
Vds=-20V, Vgs=0V, Tj=125
°C
Vds=0V, Vgs=±25V
Vgs=-10V, Id=-15A
Vgs=-4.5V, Id=-10A
Vds=-5V, Id=-15A
Is=-15A, Vgs=0V
Vgs(th) Vds=Vgs, Id=-250μA
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4- 2
ELM34421AA-N
■Typical electrical and thermal characteristics
Single P-channel MOSFET
½
½ ½ ½½½½ ½ ½
½ ½ ½½½½ ½
½ ½ ½½½½ ½
½ ½ ½½½½ ½ ½ ½
½ ½ ½½½½ ½
½ ½ ½½½½ ½ ½ ½
½ ½ ½½½½ ½
½
½ ½ ½½½½ ½ ½ ½
½
½
½
½
½
½
½
½
½
½
½
½ ½½ ½
½½ ½ ½
½ ½½
4- 3
Single P-channel MOSFET
ELM34421AA-N
½
½½
½
½
½½
½½
½½
½½
½½
½½ ½ ½
½½½
½
½
½
½
½
½
½
½
½
½
½
½
½
½
½
½
4- 4
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