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ELM34608AA-N

Description
Complementary MOSFET
File Size517KB,7 Pages
ManufacturerELM Technology Corporation
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ELM34608AA-N Overview

Complementary MOSFET

Complementary MOSFET
ELM34608AA-N
■General Description
ELM34608AA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
■Features
N-channel
Vds=60V
Id=4.5A
Rds(on) < 58mΩ(Vgs=10V)
Rds(on) < 85mΩ(Vgs=4.5V)
P-channel
Vds=-60V
Id=-3.5A
Rds(on) < 90mΩ(Vgs=-10V)
Rds(on) < 135mΩ(Vgs=-4.5V)
■Maximum Absolute Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Junction and storage temperature range
Ta=25°C
Ta=70°C
Ta=25°C
Ta=70°C
Symbol
Vds
Vgs
Id
Idm
Pd
Tj,Tstg
N-ch (Max.)
60
±20
4.5
4.0
20
2.0
1.3
-55 to 150
P-ch (Max.)
-60
±20
-3.5
-3.0
-20
2.0
1.3
-55 to 150
Unit Note
V
V
A
A
W
°C
3
■Thermal Characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
Rθja
Rθja
Device
N-ch
P-ch
Typ.
Max.
62.5
62.5
Unit
°C/W
°C/W
Note
■Pin configuration
SOP-8(TOP VIEW)
1
2
3
4
■Circuit
Pin No.
1
2
3
4
5
6
7
8
Pin name
SOURCE1
GATE1
SOURCE2
GATE2
DRAIN2
DRAIN2
DRAIN1
DRAIN1
• N-ch
D1
• P-ch
D2
8
7
6
5
G1
S1
G2
S2
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