P4KE Series
Vishay Semiconductors
formerly General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-204AL (DO-41 Plastic)
ded ge
ten Ran
Ex e
Features
ltag
Vo
V
(BR)
Unidirectional
6.8 to 540V
V
(BR)
Bidirectional
6.8 to 440V
Peak Pulse Power
400W
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Glass passivated junction
• 400W peak pulse power capabililty on 10/1000µs wave-
form, repetition rate (duty cycle): 0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
Mechanical Data
0.205 (5.2)
0.160 (4.1)
Dimensions in inches
and (millimeters)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Case:
JEDEC DO-204AL molded plastic body over
passivated junction
Terminals:
Axial leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed: 265°C/10 seconds,
0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension
Polarity:
For unidirectional types the color band denotes
the cathode, which is positive with respect to the anode
under normal TVS operation
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
54 – 5.5K per 13" paper Reel
(52mm horiz. tape), 16.5K/carton
73 – 3K per horiz. tape & Ammo box, 30K/carton
Devices for Bidirectional Applications
For bi-directional, use C or CA suffix for types P4KE6.8 thru types P4KE440
(e.g. P4KE6.8C, P4KE440CA). Electrical characteristics apply in both directions.
Maximum Ratings and Characteristics
Parameter
(T
A
= 25°C unless otherwise noted)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
T
J
, T
STG
Limit
400
See Next Table
1.0
40
3.5/5.0
60
100
–55 to +175
Unit
W
A
W
A
V
°C/W
°C/W
°C
Peak power dissipation with a 10/1000µs waveform
(1)
(Fig. 1)
Peak pulse current wih a 10/1000µs waveform
(1)
Steady state power dissipation
at T
L
= 75°C, lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current, 8.3ms
single half sine-wave unidirectional only
(3)
Maximum instantaneous forward voltage
at 25A for unidirectional only
(4)
Typical thermal resistance junction-to-lead
Typ. thermal resistance junction-to-ambient, L
Lead
= 10mm
Operating junction and storage temperature range
Notes:
(1)
(2)
(3)
(4)
Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25°C per Fig. 2
Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
V
F
= 3.5V for P4KE220(A) & below; V
F
= 5.0V for P4KE250(A) & above
Document Number 88365
08-Jul-03
www.vishay.com
1
P4KE Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
P
PPM
-- Peak Pulse Power (kW)
100
Fig. 2 – Pulse Derating Curve
100
Peak Pulse Power (P
PP
)
or Current (I
PPM
)
Derating in Percentage, %
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
75
10
50
1
25
0.1
0
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
0
25
50
75
100
125
150
175
200
td -- Pulse Width (sec.)
T
A
-- Ambient Temperature (°C)
Fig. 3 -- Pulse Waveform
150
Fig. 4 – Typ. Junction Capacitance Uni-Directional
10,000
I
PPM
-- Peak Pulse Current,
% I
RSM
100
Peak Value
I
PPM
Half Value – I
PPM
2
C
J
-- Junction Capacitance
tr = 10µsec.
T
J
= 25°C
Pulse Width (td) is defined
as the point where the
peak current decays to
50% of I
PPM
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
Measured at Zero Bias
1,000
50
10/1000µsec. Waveform
as defined by R.E.A.
td
100
Measured at
Stand-Off
Voltage, V
WM
0
0
1.0
2.0
3.0
4.0
10
1.0
t -- Time (ms)
V
(BR)
-- Breakdown Voltage (V)
10
100
200
Fig. 5 – Steady State Power Derating Curve
PM
(AV)
, Steady State Power
Dissipation (W)
1.00
L = 0.375" (9.5mm)
Lead Lengths
0.75
60 HZ Resistive or
Inductive Load
Fig. 6 - Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
200
I
FSM
-- Peak Forward
Surge Current (A)
100
50
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.50
1.6 x 1.6 x .040"
(40 x 40 x 1mm)
Copper Heat Sinks
0.25
0
10
0
25
50
75
100
125
150
175
200
1
5
10
50
100
T
L
-- Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 7 – Typical Reverse Leakage Characteristics
Transient Thermal Impedance
(°C/W)
100
Fig. 8 – Typ. Transient Thermal Impedance
100
I
D
-- Instantaneous Reverse
Leakage Current (µA)
10
Measured at Devices
Stand-off Voltage, V
WM
T
A
= 25°C
1
10
0.1
0.01
0
100
200
300
400
500
600
1
0.001
0.01
0.1
1
10
100
1000
V
(BR)
-- Breakdown Voltage (V)
www.vishay.com
4
t
p
-- Pulse Duration (sec)
Document Number 88365
08-Jul-03
Microcontroller MCU
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