SD203N/R Series
Vishay Semiconductors
Fast Recovery Diodes
(Stud Version), 200 A
FEATURES
• High power fast recovery diode series
• 1.0 to 2.0 µs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
DO-205AB (DO-9)
RoHS
COMPLIANT
• Compression bonded encapsulation
• Stud version JEDEC DO-205AB (DO-9)
• Maximum junction temperature 125 °C
• RoHS compliant
• Lead (Pb)-free
PRODUCT SUMMARY
I
F(AV)
200 A
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
50 Hz
I
FSM
60 Hz
50 Hz
60 Hz
V
RRM
t
rr
T
J
Range
Range
T
J
TEST CONDITIONS
VALUES
200
T
C
85
314
4990
5230
125
114
400 to 2500
1.0 to 2.0
25
°C
- 40 to 125
V
µs
kA
2
s
A
UNITS
A
°C
I
2
t
Document Number: 93170
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
SD203N/R Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
SD203N/R..S10
08
10
12
SD203N/R..S15
14
16
SD203N/R..S20
20
25
V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1000
1200
1400
1600
2000
2500
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
500
900
1100
1300
1500
1700
2100
2600
35
I
RRM
MAXIMUM
T
J
= 125 °C
mA
Fast Recovery Diodes
(Stud Version), 200 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS current
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 76 °C case temperature
t = 10 ms
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
200
85
314
4990
5230
4200
Sinusoidal half wave,
initial T
J
= T
J
maximum
4400
125
114
88
81
1250
1.00
1.47
1.10
m
0.46
1.65
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 628 A, T
J
= 25 °C, t
p
= 400 µs square pulse
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93170
Revision: 08-Apr-08
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
( s)
1.0
1.5
2.0
750
25
- 30
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
TYPICAL VALUES
AT T
J
= 125 °C
V
r
(V)
t
rr
AT 25 % I
RRM
( s)
2.4
2.9
3.2
Q
rr
( C)
52
90
107
I
rr
(A)
33
44
46
I
FM
Vishay Semiconductors
dI/dt
(A/ s)
t
rr
t
Q
rr
I
RM(REC)
S10
S15
S20
dir
dt
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque ± 10 %
Approximate weight
Case style
See dimensions (link at the end of datasheet)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
Lubricated threads
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.115
K/W
0.08
31
24.5
250
Nm
g
UNITS
°C
DO-205AB (DO-9)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.010
0.013
0.017
0.025
0.044
RECTANGULAR CONDUCTION
0.008
0.014
0.019
0.027
0.044
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 93170
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD203N/R Series
Vishay Semiconductors
Maximum Allowable Case T
emperature (°C)
130
120
110
Conduction Angle
Fast Recovery Diodes
(Stud Version), 200 A
Maximum Average F
orward Power Los (W)
s
550
500
450
400
350
300
250
200 RMS Limit
150
100
50
0
0
50
100
150
200
250
300
350
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Conduction Period
S
D203N/ RS
eries
R
thJC
(DC) = 0.115 K/ W
DC
180°
120°
90°
60°
30°
100
90
80
70
0
40
80
120
160
200
240
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
30°
60°
90°
120°
180°
S
D203N/ R S
eries
T
J
= 125°C
Maximum Allowable Case T
emperature (°C)
ine
Peak Half S Wave Forward Current (A)
130
120
110
Conduction Period
S
D203N/ R S
eries
R
thJC
(DC) = 0.115 K/ W
5000
4500
4000
3500
3000
2500
2000
1500
1000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
100
90
80
70
0
50
100
150
200
250
300
350
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
30°
60°
90°
120°
180°
S
D203N/ R S
eries
DC
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average Forward Power Loss (W)
Peak Half S Wave Forward Current (A)
ine
350
300
250
200
150
100
50
0
0
50
100
150
200
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Conduction Angle
5500
5000
4500
4000
3500
3000
2500
2000
1500
180°
120°
90°
60°
30°
RMS Limit
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 125 °C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
S
D203N/ R S
eries
T
J
= 125°C
S
D203N/ R S
eries
0.1
Pulse T
rain Duration (s)
1
1000
0.01
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93170
Revision: 08-Apr-08
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
SD203N/R Series
Fast Recovery Diodes
(Stud Version), 200 A
(K/ W)
Vishay Semiconductors
1
S
teady S
tate Value:
R thJC = 0.115 K/ W
(DC Operation)
0.1
10000
Instantaneous Forward Current (A)
T = 25 °C
J
T
J
= 125 °C
1000
T
ransient T
hermal Impedance Z
thJC
0.01
S
D203N/ R S
eries
S
D203N/ R S
eries
100
.5
2.5
4.5
6.5
Instantaneous Forward Voltage (V)
0.001
0.001
0.01
0.1
1
10
Fig. 7 - Forward Voltage Drop Characteristics
S
quare Wave Puls Duration (s)
e
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
120
V
100
Forwa rd R
ecovery (V)
80
60
FP
I
T
J
= 125°C
T
J
= 25°C
40
20
0
0
200
400
600
800
1000
1200
1400
1600
1800
2000
R
ate Off F Of Forward Current di/ dt (A/ usec)
all
Fig. 9 - Typical Forward Recovery Characteristics
S
D203N/ R 20 S
..S
eries
Maximum Reverse Recovery T
ime - T (µs)
rr
2.8
2.6
2.4
2.2
2
1.8
200 A
400 A
Maximum Reverse R
ecovery Charge - Qrr (µC)
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80
100
S
D203N/ R..S S
10 eries
T = 125 °C, V r = 30V
J
200 A
400 A
I
FM
= 750 A
S
quare Pulse
S
D203N/ R 10 S
..S
eries
T = 125 °C, V r = 30V
J
I
FM
= 750 A
S
quare Pulse
1.6
10
100
Rate Of Fall Of Forward Current - di/ dt (A/µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 10 - Recovery Time Characteristics
Fig. 11 - Recovery Charge Characteristics
Document Number: 93170
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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