SEMICONDUCTOR
TECHNICAL DATA
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
KTA1552T
EPITAXIAL PLANAR PNP TRANSISTOR
E
FEATURES
Adoption of FBET, MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
A
F
G
K
B
DIM
A
B
2
3
C
D
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
D
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTC3552T.
C
L
G
High-Speed Switching.
1
E
F
G
H
I
J
K
L
J
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
DC
Pulse
SYMBOL
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
*
T
j
T
stg
0.8
RATING
-50
-50
-50
-6
-3
-6
-600
0.9
150
-55
)
150
UNIT
V
V
V
A
mA
W
1. EMITTER
2. BASE
3. COLLECTOR
Marking
Lot No.
Type Name
* Package mounted on a ceramic board (600
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Turn-On Time
Swiitching
Time
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
h
FE
f
T
C
ob
t
on
INPUT
TEST CONDITION
V
CB
=-40V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-10 A, I
E
=0
I
C
=-100 A, V
BE
=0
I
C
=-1mA, I
B
=0
I
E
=-10 A, I
C
=0
I
C
=-1A, I
B
=-50mA
I
C
=-2A, I
B
=-100mA
I
C
=-2A, I
B
=-100mA
V
CE
=-2V, I
C
=-100mA
V
CE
=-10V, I
C
=-500mA
V
CB
=-10V, f=1MHz
PW=20µs
DC
<
1%
=
I
B1
I
B2
R
B
50Ω
V
R
100µF
470µF
V
CC
=-25V
R
L
OUTPUT
MIN.
-
-
-50
-50
-50
-6
-
-
-
200
-
-
-
Storage Time
t
stg
Fall Time
t
f
V
BE
=5V
-10I
B1
=10I
B2
=I
C
=-1A
2001. 6. 28
Revision No : 0
I
J
MAXIMUM RATING (Ta=25
)
H
TSM
SL
TYP.
-
-
-
-
-
-
-100
-185
-0.88
-
360
24
30
MAX.
-0.1
-0.1
-
-
-
-
-200
-500
-1.2
560
-
-
-
MHz
pF
UNIT
A
A
V
V
V
V
mV
mV
V
-
230
-
nS
-
15
-
1/3
KTA1552T
I
C
- V
CE
-2.0
COLLECTOR CURRENT I
C
(A)
-1.6
-1.2
-0.8
-2.0mA
h
FE
- I
C
1K
DC CURRENT GAIN h
FE
A
-20m
A
-10m
A
-8.0m
A
-6.0m
mA
30mA
-40
-
500
300
Ta=75 C
Ta=25 C
Ta=-25 C
-4.0mA
100
50
30
V
CE
=-2V
-0.4
0
I
B
=0mA
0
-0.2
-0.4
-0.6
-0.8
-1.0
10
-0.01
-0.03
-0.1
-0.3
-1
-3
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
-1K
-500
-300
I
C
/I
B
=20
V
CE(sat)
- I
C
-1K
-500
-300
C
I
C
/I
B
=50
-100
-50
-30
75
Ta=
C
-100
-50
-30
T
C
25
Ta=
T
-25
a=
C
5
C
75
=-2
Ta
Ta=
5 C
a=2
-10
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
-0.01
-0.03
-0.1
-0.3
-1
-3
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
V
BE(sat)
- I
C
-10K
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(mV)
-5K
-3K
COLLECTOR CURRENT I
C
(A)
I
C
/I
B
=50
I
C
- V
BE
-3.0
V
CE
=-2V
-2.5
-2.0
C
-1K
-500
-300
Ta=25 C
Ta=75 C
-1.0
-0.5
0
-100
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
0
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
BASE-EMITTER VOLTAGE V
BE
(V)
COLLECTOR CURRENT I
C
(A)
2001. 6. 28
Revision No : 0
Ta=25
Ta=-25 C
-1.5
C
Ta=-25
C
Ta=75
2/3
KTA1552T
f
T
- I
C
COLLECTOR OUTPUT CAPACITANCE
C
ob
(pF)
TRANSITION FREQUENCY f
T
(MHz)
1K
500
300
V
CE
=-10V
C
ob
- V
CB
100
50
30
100
50
30
10
5
3
f=1MHz
10
-0.01
1
-0.03
-0.1
-0.3
-1
-3
-1
-3
-10
-30
-100
COLLECTOR CURRENT I
C
(A)
COLLECTOR-BASE VOLTAGE V
CB
(V)
SAFE OPERATING AREA
-10
COLLECTOR CURRENT I
C
(A)
-5
-3
-1
-0.5
-0.3
-0.1
-0.05
-0.03
I
C
MAX.(PULSED)
Pc - Ta
COLLECTOR POWER DISSIPATION
P
C
(W)
1.0
0.8
0.6
0.4
0.2
0
MOUNTED ON A
CERAMIC BOARD
(600mm
2
0.8mm)
1m
10
I
C
MAX
(CONTIN-
UOUS)
DC
OP
ER
S*
S*
0
µ
50
S*
0
µ
10
0m
S*
10
mS
*
AT
IO
N
-0.01
-0.1
* SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
(600mm
2
0.8mm)
0
20
40
60
80
100
120
140
160
-0.3
-1
-3
-10
-30
-100
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2001. 6. 28
Revision No : 0
3/3
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