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BLP8G10S-45P

Description
TRANSISTOR RF POWER, FET, FET RF Power
CategoryDiscrete semiconductor    The transistor   
File Size229KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BLP8G10S-45P Overview

TRANSISTOR RF POWER, FET, FET RF Power

BLP8G10S-45P Parametric

Parameter NameAttribute value
MakerNXP
package instruction,
Reach Compliance Codeunknown
BLP8G10S-45P;
BLP8G10S-45PG
Power LDMOS transistor
Rev. 1 — 25 July 2013
Product data sheet
1. Product profile
1.1 General description
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power
transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Application performance
Typical RF performance at T
case
= 25
C; I
Dq
= 224 mA in common source class-AB production
circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
960
V
DS
(V)
28
P
L(AV)
(W)
2.5
G
p
(dB)
20.8
D
(%)
19.8
ACPR
(dBc)
49
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF;
carrier spacing = 5 MHz; per section unless otherwise specified.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation (700 MHz to 1000 MHz)
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
W-CDMA
LTE
GSM
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