BLF6G10LS-160
Power LDMOS transistor
Rev. 01 — 29 September 2008
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
920 to 960
V
DS
(V)
32
P
L(AV)
(W)
32
G
p
(dB)
22
η
D
(%)
27
ACPR
(dBc)
−42
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a
supply voltage of 32 V and an I
Dq
of 1200 mA:
N
Average output power = 32 W
N
Power gain = 22 dB
N
Efficiency = 27 %
N
ACPR =
−42
dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (800 MHz to 1000 MHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
NXP Semiconductors
BLF6G10LS-160
Power LDMOS transistor
1.3 Applications
I
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G10LS-160 -
Description
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
39
+150
225
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
°C;
P
L
= 32 W
Typ
Unit
0.42 K/W
BLF6G10LS-160_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 September 2008
2 of 10
NXP Semiconductors
BLF6G10LS-160
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.72 mA
V
DS
= 10 V; I
D
= 216 mA
V
DS
= 32 V;
I
D
= 1300 mA
V
GS
= 0 V; V
DS
= 32 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 13 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.5 A
V
GS
= 0 V; V
DS
= 32 V;
f = 1 MHz
Min
65
1.4
1.7
-
30.6
-
-
-
-
Typ
-
1.9
2.2
-
39
-
13.5
0.07
4.2
Max
-
2.4
2.7
5
-
450
-
-
-
Unit
V
V
V
µA
A
nA
S
Ω
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 922.5 MHz; f
2
= 927.5 MHz; f
3
= 952.5 MHz; f
4
= 957.5 MHz;
RF performance at V
DS
= 32 V; I
Dq
= 1200 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
η
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 32 W
P
L(AV)
= 32 W
P
L(AV)
= 32 W
P
L(AV)
= 32 W
Conditions
Min
-
21
-
24
-
Typ
32
22
−7.1
27
−42
Max
-
24
−5
-
−39
Unit
W
dB
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF6G10LS-160 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 32 V;
I
Dq
= 1200 mA; P
L
= 160 W (CW); f = 960 MHz.
BLF6G10LS-160_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 September 2008
3 of 10
NXP Semiconductors
BLF6G10LS-160
Power LDMOS transistor
7.2 One-tone CW
24
G
p
(dB)
22
001aah475
60
η
D
(%)
40
η
D
G
p
20
20
18
0
40
80
120
0
160
200
P
L
(W)
V
DS
= 32 V; I
Dq
= 1200 mA; f = 960 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as functions of load power;
typical values
7.3 Two-tone CW
24
G
p
(dB)
G
p
22
40
001aah476
60
η
D
(%)
0
IMD
(dBc)
−20
001aah477
IMD3
IMD5
IMD7
η
D
20
20
−40
−60
18
0
40
80
120
0
160
200
P
L(PEP)
(W)
−80
0
80
160
P
L(PEP)
(W)
240
V
DS
= 32 V; I
Dq
= 1200 mA; f
1
= 959.95 MHz;
f
2
= 960.05 MHz.
V
DS
= 32 V; I
Dq
= 1200 mA; f
1
= 959.95 MHz;
f
2
= 960.05 MHz.
Fig 2.
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
Fig 3.
Intermodulation distortion as a function of
peak envelope load power; typical values
BLF6G10LS-160_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 September 2008
4 of 10
NXP Semiconductors
BLF6G10LS-160
Power LDMOS transistor
7.4 2-carrier W-CDMA
24
G
p
(dB)
23
G
p
22
30
−40
21
η
D
20
−60
20
10
001aah478
50
η
D
(dB)
40
0
ACPR
(dBc)
−20
001aah479
19
0
20
40
P
L(AV)
(W)
60
0
−80
0
20
40
P
L(AV)
(W)
60
V
DS
= 32 V; I
Dq
= 1200 mA; f
1
= 952.5 MHz;
f
2
= 957.5 MHz; carrier spacing 5 MHz.
V
DS
= 32 V; I
Dq
= 1200 mA; f
1
= 952.5 MHz;
f
2
= 957.5 MHz; carrier spacing 5 MHz.
Fig 4.
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 5.
2-carrier W-CDMA adjacent channel power
ratio as function of average load power;
typical values
8. Test information
V
DD
C8
C2
C6
C3
C5
C7
C9
C11
R2
C16
V
GG
C15
R1
C12
C10
L1
input
50
Ω
C1
C14
C13
C4
output
50
Ω
001aah480
Fig 6.
Test circuit for operation at 900 MHz
BLF6G10LS-160_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 29 September 2008
5 of 10
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