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1N4934

Description
1 A, 100 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size53KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
Environmental Compliance
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1N4934 Overview

1 A, 100 V, SILICON, SIGNAL DIODE

1N4934 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerJinan Jing Heng Electronics
package instructionO-PALF-W2
Reach Compliance Codeunknow
Minimum breakdown voltage100 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5 µA
Maximum reverse recovery time0.2 µs
Reverse test voltage100 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
R
1N4933 TH R U 1N4937
FAST RECOVERY RECTIFIER
Reverse Voltage: 50 to 600 Volts
Forward Current:1.0Ampere
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Construction utilizes void-free molded plastic technique
High temperature soldering guaranteed:260
°
C/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
DO-41
1.0(25.4)
MIN
0.107(2.7)
0.080(2.0)
DIA.
0.205(5.20)
0.161(4.10)
MECHANICAL DATA
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012ounce, 0.34 gram
0.034(0.85)
0.026(0.65)
DIA.
1.0(25.4)
MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Dimensions in inches and (millimeters)
(Rating at 25
°
C ambient temperature unless otherwise specified.Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load,derate current by 20%.)
Symbols
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 1.0 A
1N4933
50
35
50
1N4934
100
70
100
1N4935
200
140
200
1.0
30.0
1.3
1N4936
400
280
400
1N4937
600
420
600
Units
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
V
olts
V
olts
V
olts
A
mp
s
A
mps
V
olts
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°C
T
A
=100
°C
5.0
250
μ
A
ns
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
t
rr
C
J
T
J
T
STG
200
15.0
-55 to+150
pF
°C
Note:
1.Test conditions: I
F=
1.0A,V
R
=30V , di/dt=50A/
μ
s, and Irr=10%I
RM
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts D.C.
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

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