UNISONIC TECHNOLOGIES CO., LTD
DTC115E
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
FEATURES
NPN SILICON TRANSISTOR
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Package
SOT-23
SOT-323
SOT-523
O: OUT
Pin Assignment
1
2
3
G
I
O
G
I
O
G
I
O
Packing
Tape Reel
Tape Reel
Tape Reel
DTC115EG-AE3-R
DTC115EG-AL3-R
DTC115EG-AN3-R
Note: Pin Assignment: G: GND
I: IN
MARKING
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PARAMETER
SYMBOL
V
CC
V
IN
I
OUT
I
OUT(MAX)
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°C, unless otherwise specified)
RATINGS
UNIT
Supply Voltage
50
V
Input Voltage
-10 ~ +40
V
20
Output Current
mA
100
SOT-23/SOT-323
200
mW
Power Dissipation
P
C
SOT-523
150
mW
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
V
CC
=5V, I
OUT
=100μA
V
OUT
=0.3V, I
OUT
=1mA
I
OUT
=5mA, I
IN
=0.25mA
V
IN
= 5V
V
CC
=50V, V
IN
=0V
V
OUT
= 5V, I
OUT
= 5mA
MIN
3
TYP MAX UNIT
0.5
V
0.1
0.3
0.15
0.5
130
1.2
V
mA
μA
kΩ
MHz
SYMBOL
V
I(OFF)
Input Voltage
V
I(ON)
Output Voltage
V
OUT(ON)
Input Current
I
IN
Output Current
I
O(OFF)
DC Current Gain
h
FE
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
f
T
Note: Transition frequency of the device
82
70
0.8
V
CE
=10V, I
E
=-5mA, f=100MHz (Note)
100
1
250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
140
120
Output Current, I
O
(mA)
Output Currrn vs. Output-input Voltage
14
12
10
8
6
4
2
0
Output Currrn vs. Output Voltage
Output Currrnt, IO(uA)
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
0
15
30
45
60
75
90
105
120
Output-input Voltage, V
OI
( V)
Output Voltage, V
O
(V)
140
120
Output Currrnt, IO(uA)
100
80
60
40
20
0
Output Current vs. GND - input Voltage
1000
DC Current Gain vs. Output Current
DC Current Gain, G
I
100
0
3
6
9
12
15
18
21
24
10
1
10
Output Current, I
O
(mA)
V
O
=5V
100
GND - input Voltage, V
GI
( V)
Input Voltage, V
I(ON)
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Output Current, I
O
(mA)
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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