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DTC124EG-AL3-R

Description
NPN DIGITAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size170KB,3 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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DTC124EG-AL3-R Overview

NPN DIGITAL TRANSISTOR

DTC124EG-AL3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)56
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
UNISONIC TECHNOLOGIES CO.,
DTC124E
NPN DIGITAL TRANSISTOR
(BUILT-IN RESISTORS)
FEATURES
NPN EPITAXIAL SILICON TRANSISTOR
*Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input
resistors (see the equivalent circuit).
*The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input
They also have the advantage of almost completely
eliminating parasitic effects.
*Only the on / off conditions need to be set for operation,
making device design easy.
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Ordering Number
Lead Free
DTC124EL-AE3-R
DTC124EL-AL3-R
DTC124EL-AN3-R
Note: Pin Assignment: G: GND
Halogen Free
DTC124EG-AE3-R
DTC124EG-AL3-R
DTC124EG-AN3-R
I: IN O: OUT
Package
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
G
I
O
G
I
O
G
I
O
Packing
Tape Reel
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co.,
1 of 3
QW-R206-045,D

DTC124EG-AL3-R Related Products

DTC124EG-AL3-R DTC124EG-AE3-R DTC124EG-AN3-R DTC124EL-AL3-R DTC124EL-AN3-R DTC124E_11
Description NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR
Is it Rohs certified? conform to conform to conform to conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
Contacts 3 3 3 3 3 -
Reach Compliance Code compli compli compli compli compli -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 -
Other features BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 -
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A -
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V -
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR -
Minimum DC current gain (hFE) 56 56 56 56 56 -
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 -
Number of components 1 1 1 1 1 -
Number of terminals 3 3 3 3 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type NPN NPN NPN NPN NPN -
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.15 W 0.2 W 0.15 W -
surface mount YES YES YES YES YES -
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING -
Terminal location DUAL DUAL DUAL DUAL DUAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON SILICON -
Nominal transition frequency (fT) 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz -
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