UNISONIC TECHNOLOGIES CO., LTD
UT3401Z
P-CHANNEL ENHANCEMENT
MODE
DESCRIPTION
The UTC
UT3401Z
is P-channel enhancement mode Power
MOSFET, designed with high density cell, with fast switching speed,
low on-resistance, excellent thermal and electrical capabilities and
operation with low gate voltages.
This device is suitable for use as a load switch or in PWM
applications.
Power MOSFET
SYMBOL
3.Drain
2.Gate
1.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT3401ZL-AE3-R
UT3401ZG-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
S
G
D
Packing
Tape Reel
MARKING
3DA
L: Lead Free
G: Halogen Free
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UT3401Z
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V
DSS
V
GSS
I
D
I
DM
P
D
Power MOSFET
RATINGS
-30
UNITS
V
±12
V
Continuous (Note2)
-4.2
A
Drain Current
Pulsed (Note3)
-30
A
Power Dissipation (Note 2)
1.4
W
ESD(HBM)
±100
V
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. Pulse width
≤300µs,
duty cycle
≤2%
THERMAL DATA
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
MIN
TYP
65
MAX
90
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance (Note 2)
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=-250μA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
, I
D
=-250μA
V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-4A
V
GS
=-2.5V, I
D
=-1A
MIN
-30
-1
±5
-0.7
-1
42
53
80
954
115
77
6.3
3.2
38.2
12
9.4
2
3
-0.75
-1
-2.2
20.2
11.2
-1.3
50
65
120
TYP
MAX UNIT
V
µA
µA
V
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
ns
nC
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=-15V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
t
D(ON)
V
GS
=-10V, V
DS
=-15V
Turn-ON Rise Time
t
R
R
L
=3.6Ω, R
G
=6Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
Total Gate Charge (Note 2)
Q
G
V
GS
=-4.5V, V
DS
=-15V, I
D
=-4A
Gate-Source Charge
Q
GS
Gate-Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
V
SD
V
DS
=0V, I
S
=-1A
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Reverse Recovery Time
t
RR
I
F
=-4A, dI/dt=100A/μs
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse width limited by T
J(MAX)
2. Pulse width
≤300µs,
duty cycle
≤2%
3. Surface mounted on 1 in
2
copper pad of FR4 board
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UT3401Z
TYPICAL CHARACTERISTICS
Power MOSFET
Continuous Drain Current, I
D
(A)
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Continuous Drain Current, I
D
(A)
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TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Gate-Source Voltage, -V
GS
(V)
Maximum Forward Biased Safe
Operating Area
100.0
Continuous Drain Current, -I
D
(A)
T
J(Max)
=150°C
T
A
=25°C
40
Capacitance (pF)
Single Pulse Power Rating
Junction-to-Ambient
T
J(MAX)
=150°C
T
A
=25°C
10μs
100μs
1ms
Power (W)
100
30
R
DS(ON)
10.0 limited
20
1.0
1s
10s
0.1s
10ms
10
DC
0.1
0.1
1
10
0
0.001
0.01
0.1
1
10
100
1000
Drain-Source Voltage, -V
DS
(V)
Pulse Width (s)
Normalized Maximum Transient Thermal Impedance
10
Normalized Transient Thermal
Resistance, Z
θJA
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01,
single pulse
1
0.1
P
D
T
on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
1000
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UT3401Z
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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